THz Characterization of Ge10Sb20Se70 Thin Film

Among phase change materials, chalcogenides show very intriguing properties. The optical tunability of the various crystalline phases makes them promising candidates for the development of different optoelectronic devices. The majority of these devices are designed to work in the infrared (IR) region and are relatively less explored in the terahertz (THz) regime. With recent advances in THz science and technology, it is therefore useful to measure the electromagnetic properties of new chalcogenide alloys in this frequency range. Here we report the synthesis and characterization of an amorphous Ge10Sb20Se70 thin film grown on single-crystal quartz and its characterization using time-domain spectroscopy in the range 0.3–1.4 THz. Material parameters are numerically retrieved through the transmission function of the system film/substrate.