A semiconductor device in one embodiment includes a depletion junction, a peripheral region adjacent the depletion junction, and a buffer layer. The buffer layer is adapted to reduce localization of avalanche breakdown proximate the interface between the depletion junction and the peripheral region.

Semiconducto Device with Buffer Layer / Irace, Andrea; Breglio, Giovanni; Spirito, Paolo; Merlin, L; Raffo, D; Bricconi, A.. - (2009).

Semiconducto Device with Buffer Layer

IRACE, ANDREA;BREGLIO, GIOVANNI;SPIRITO, PAOLO;
2009

Abstract

A semiconductor device in one embodiment includes a depletion junction, a peripheral region adjacent the depletion junction, and a buffer layer. The buffer layer is adapted to reduce localization of avalanche breakdown proximate the interface between the depletion junction and the peripheral region.
2009
Semiconducto Device with Buffer Layer / Irace, Andrea; Breglio, Giovanni; Spirito, Paolo; Merlin, L; Raffo, D; Bricconi, A.. - (2009).
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11588/122622
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