SPIRITO, PAOLO
SPIRITO, PAOLO
DIPARTIMENTO DI INGEGNERIA ELETTRICA E TECNOLOGIE DELL'INFORMAZIONE
Experimental study on power consumption in lifetime engineered power diodes
2009 Daliento, Santolo; L., Mele; Spirito, Paolo; R., Carta; L., Merlin
The bipolar mode field effect transistor (BMFET) as an optically controlled switch: numerical and experimental results
1996 Breglio, Giovanni; R., Casavola; A., Cutolo; Spirito, Paolo
Experimental measurements of recombination lifetime in proton irradiated power devices
2000 Daliento, Santolo; A., Sanseverino; Spirito, Paolo; G., Busatto; J., Wyss
Helium implantation in silicon: detailed experimental analysis of resistivity and lifetime profiles as a function of the implantation dose and energy
2006 Daliento, Santolo; L., Mele; Spirito, Paolo; Gialanella, Lucio; Romano, Mario; Limata, BENEDICTA NORMANNA; R., Carta; L., Bellemo
An experimental analysis of localized lifetime and resistivity control by helium implant in Si
2005 Daliento, Santolo; L., Mele; Spirito, Paolo; Gialanella, Lucio; Romano, Mario; B. N., Limata; R., Carta; L., Bellemo
AN ELECTRICAL TECHNIQUE FOR THE MEASUREMENT OF THE INTERFACE RECOMBINATION VELOCITY BASED ON A THREE-TERMINAL TEST STRUCTURE
2003 Daliento, Santolo; Spirito, Paolo; Sanseverino, Annunziata; F., Roca
Characterization of recombination centers in Si epilayers after He implantation by direct measurement of local lifetime distribution with the ac profiling technique
2004 Spirito, Paolo; Daliento, Santolo; A., Sanseverino; Gialanella, Lucio; Romano, Mario; Limata, BENEDICTA NORMANNA; R., Carta; L., Bellemo
Lifetime and resistivity modifications induced by helium implantation in silicon: experimental analysis with the ac profiling technique
2008 Daliento, Santolo; Mele, L; Spirito, Paolo; Gialanella, Lucio; Limata, BENEDICTA NORMANNA
AN ELECTRICAL TECHNIQUE FOR THE MEASUREMENT OF THE SURFACE RECOMBINATION VELOCITY
2002 Daliento, Santolo; Spirito, Paolo; Sanseverino, Annunziata; G., Contento; N., Martucciello; I., Nasti; F., Roca
Power semiconductor devices - continuous development
1996 N., Stojadinovic; Spirito, Paolo
A new test structure for lifetime profiling in very thick lightly doped silicon material
1998 Daliento, Santolo; A., Sanseverino; Spirito, Paolo
Experimental measurement of in-depth secondary defect distribution prodced by Helium implantation in silicon
2006 Daliento, Santolo; Mele, L.; Spirito, Paolo; Gialanella, Lucio; Limata, BENEDICTA NORMANNA; Romano, Mario
Electrical measurement of the lattice damage induced by a-particle implantation in silicon
2005 L., Bellemo; R., Carta; Daliento, Santolo; L., Gialanella; B. N., Limata; L., Mele; Romano, Mario; A., Sanseverino; Spirito, Paolo
He voids lifetime control compared with buffer-layer engineering for a 600V punch-through IGBT
2002 Napoli, Ettore; Strollo, ANTONIO GIUSEPPE MARIA; Spirito, Paolo; F., Frisina; L., Fragapane; D., Fagone
Thermal simulation and ultrafast IR temperature mapping of a Smart Power Switch for automotive applications
2009 Riccio, Michele; Irace, Andrea; Breglio, Giovanni; Spirito, Paolo; . Kosel V, .; Glavanovics, M.; Satka, A.
TherMos3: a 3D electrothermal simulator for smart Power Devices
2006 Irace, Andrea; Breglio, Giovanni; Spirito, Paolo
Reliability enhancement with the aid of transient infrared thermal analysis of smart Power MOSFETs during short circuit operation
2005 Irace, Andrea; Breglio, Giovanni; Spirito, Paolo; R., Letor; S., Russo
Fast Infrared thermal analysis of Smart Power MOSFETS in permanent short circuit operation
2006 Breglio, Giovanni; Irace, Andrea; Spirito, Paolo; R., Letor; S., Russo
Semiconducto Device with Buffer Layer
2009 Irace, Andrea; Breglio, Giovanni; Spirito, Paolo; Merlin, L; Raffo, D; Bricconi, A.
Experimental characterization of temperature distribution on Power MOS devices during Unclamped Inductive Switching
2004 Irace, Andrea; Breglio, Giovanni; Spirito, Paolo; E., D'Arcangelo
| Titolo | Tipologia | Data di pubblicazione | Autore(i) | File |
|---|---|---|---|---|
| Experimental study on power consumption in lifetime engineered power diodes | 1.1 Articolo in rivista | 2009 | Daliento, Santolo; L., Mele; Spirito, Paolo; R., Carta; L., Merlin | |
| The bipolar mode field effect transistor (BMFET) as an optically controlled switch: numerical and experimental results | 1.1 Articolo in rivista | 1996 | Breglio, Giovanni; R., Casavola; A., Cutolo; Spirito, Paolo | |
| Experimental measurements of recombination lifetime in proton irradiated power devices | 4.1 Articoli in Atti di convegno | 2000 | Daliento, Santolo; A., Sanseverino; Spirito, Paolo; G., Busatto; J., Wyss | |
| Helium implantation in silicon: detailed experimental analysis of resistivity and lifetime profiles as a function of the implantation dose and energy | 4.1 Articoli in Atti di convegno | 2006 | Daliento, Santolo; L., Mele; Spirito, Paolo; Gialanella, Lucio; Romano, Mario; Limata, BENEDICTA NORMANNA; R., Carta; L., Bellemo | |
| An experimental analysis of localized lifetime and resistivity control by helium implant in Si | 4.1 Articoli in Atti di convegno | 2005 | Daliento, Santolo; L., Mele; Spirito, Paolo; Gialanella, Lucio; Romano, Mario; B. N., Limata; R., Carta; L., Bellemo | |
| AN ELECTRICAL TECHNIQUE FOR THE MEASUREMENT OF THE INTERFACE RECOMBINATION VELOCITY BASED ON A THREE-TERMINAL TEST STRUCTURE | 1.1 Articolo in rivista | 2003 | Daliento, Santolo; Spirito, Paolo; Sanseverino, Annunziata; F., Roca | |
| Characterization of recombination centers in Si epilayers after He implantation by direct measurement of local lifetime distribution with the ac profiling technique | 1.1 Articolo in rivista | 2004 | Spirito, Paolo; Daliento, Santolo; A., Sanseverino; Gialanella, Lucio; Romano, Mario; Limata, BENEDICTA NORMANNA; R., Carta; L., Bellemo | |
| Lifetime and resistivity modifications induced by helium implantation in silicon: experimental analysis with the ac profiling technique | 1.1 Articolo in rivista | 2008 | Daliento, Santolo; Mele, L; Spirito, Paolo; Gialanella, Lucio; Limata, BENEDICTA NORMANNA | |
| AN ELECTRICAL TECHNIQUE FOR THE MEASUREMENT OF THE SURFACE RECOMBINATION VELOCITY | 2.1 Contributo in volume (Capitolo o Saggio) | 2002 | Daliento, Santolo; Spirito, Paolo; Sanseverino, Annunziata; G., Contento; N., Martucciello; I., Nasti; F., Roca | |
| Power semiconductor devices - continuous development | 1.1 Articolo in rivista | 1996 | N., Stojadinovic; Spirito, Paolo | |
| A new test structure for lifetime profiling in very thick lightly doped silicon material | 4.1 Articoli in Atti di convegno | 1998 | Daliento, Santolo; A., Sanseverino; Spirito, Paolo | |
| Experimental measurement of in-depth secondary defect distribution prodced by Helium implantation in silicon | 1.1 Articolo in rivista | 2006 | Daliento, Santolo; Mele, L.; Spirito, Paolo; Gialanella, Lucio; Limata, BENEDICTA NORMANNA; Romano, Mario | |
| Electrical measurement of the lattice damage induced by a-particle implantation in silicon | 1.1 Articolo in rivista | 2005 | L., Bellemo; R., Carta; Daliento, Santolo; L., Gialanella; B. N., Limata; L., Mele; Romano, Mario; A., Sanseverino; Spirito, Paolo | |
| He voids lifetime control compared with buffer-layer engineering for a 600V punch-through IGBT | 4.1 Articoli in Atti di convegno | 2002 | Napoli, Ettore; Strollo, ANTONIO GIUSEPPE MARIA; Spirito, Paolo; F., Frisina; L., Fragapane; D., Fagone | |
| Thermal simulation and ultrafast IR temperature mapping of a Smart Power Switch for automotive applications | 4.1 Articoli in Atti di convegno | 2009 | Riccio, Michele; Irace, Andrea; Breglio, Giovanni; Spirito, Paolo; . Kosel V, .; Glavanovics, M.; Satka, A. | |
| TherMos3: a 3D electrothermal simulator for smart Power Devices | 4.1 Articoli in Atti di convegno | 2006 | Irace, Andrea; Breglio, Giovanni; Spirito, Paolo | |
| Reliability enhancement with the aid of transient infrared thermal analysis of smart Power MOSFETs during short circuit operation | 1.1 Articolo in rivista | 2005 | Irace, Andrea; Breglio, Giovanni; Spirito, Paolo; R., Letor; S., Russo | |
| Fast Infrared thermal analysis of Smart Power MOSFETS in permanent short circuit operation | 4.1 Articoli in Atti di convegno | 2006 | Breglio, Giovanni; Irace, Andrea; Spirito, Paolo; R., Letor; S., Russo | |
| Semiconducto Device with Buffer Layer | 6.1 Brevetto | 2009 | Irace, Andrea; Breglio, Giovanni; Spirito, Paolo; Merlin, L; Raffo, D; Bricconi, A. | |
| Experimental characterization of temperature distribution on Power MOS devices during Unclamped Inductive Switching | 1.1 Articolo in rivista | 2004 | Irace, Andrea; Breglio, Giovanni; Spirito, Paolo; E., D'Arcangelo |