A new compact model for power IGBTs is presented in this paper. In the proposed approach, the wide base bipolar transistor of the IGBT is modeled by using a Laplace-transform solution of the ambipolar diffusion equation. The obtained nonquasi-static BJT model is coupled with a proposed short-channel MOSFET model, to give the overall IGBT behavior. The developed IGBT model is implemented as a subcircuit in the PSPICE simulator, resulting in good accuracy and reduced CPU time
A new IGBT circuit model for SPICE simulation / Strollo, ANTONIO GIUSEPPE MARIA. - STAMPA. - 1:(1997), pp. 133-138. (Intervento presentato al convegno PESC Record - IEEE Annual Power Electronics Specialists Conference tenutosi a St. Louis, USA nel June 1997) [10.1109/PESC.1997.616704].
A new IGBT circuit model for SPICE simulation
STROLLO, ANTONIO GIUSEPPE MARIA
1997
Abstract
A new compact model for power IGBTs is presented in this paper. In the proposed approach, the wide base bipolar transistor of the IGBT is modeled by using a Laplace-transform solution of the ambipolar diffusion equation. The obtained nonquasi-static BJT model is coupled with a proposed short-channel MOSFET model, to give the overall IGBT behavior. The developed IGBT model is implemented as a subcircuit in the PSPICE simulator, resulting in good accuracy and reduced CPU timeI documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
