Reply to "Comment on Modeling of minority-carrier transport in nonuniformly doped silicon regions with asymptotic expansions" / Rinaldi, Niccolo'. - In: IEEE TRANSACTIONS ON ELECTRON DEVICES. - ISSN 0018-9383. - STAMPA. - 42:6(1995), pp. 1200-1202.

Reply to "Comment on Modeling of minority-carrier transport in nonuniformly doped silicon regions with asymptotic expansions"

RINALDI, NICCOLO'
1995

1995
Reply to "Comment on Modeling of minority-carrier transport in nonuniformly doped silicon regions with asymptotic expansions" / Rinaldi, Niccolo'. - In: IEEE TRANSACTIONS ON ELECTRON DEVICES. - ISSN 0018-9383. - STAMPA. - 42:6(1995), pp. 1200-1202.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11588/480866
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