This paper proposes a thorough experimental characterization of the performance of commercially available SiC Power MOSFETs under short-circuit conditions. The purpose is to assess and understand the degradation process and the failure mechanisms that limit device reliability to identify optimal routes for subsequent technology development. This paper complements electro-thermal functional tests with structural characterization offering deeper insight into device technology related aspects
Short-circuit robustness of SiC Power MOSFETs: Experimental analysis2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's (ISPSD) / Alberto, Castellazzi; Asad, Fayyaz; Li, Yang; Riccio, Michele; Irace, Andrea. - (2014), pp. 71-74. (Intervento presentato al convegno International Symposium on Power Semiconductor Devices and ICs) [10.1109/ISPSD.2014.6855978].
Short-circuit robustness of SiC Power MOSFETs: Experimental analysis2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's (ISPSD)
RICCIO, MICHELE;IRACE, ANDREA
2014
Abstract
This paper proposes a thorough experimental characterization of the performance of commercially available SiC Power MOSFETs under short-circuit conditions. The purpose is to assess and understand the degradation process and the failure mechanisms that limit device reliability to identify optimal routes for subsequent technology development. This paper complements electro-thermal functional tests with structural characterization offering deeper insight into device technology related aspectsI documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
