This paper presents a computationally efficient 3-D simulation approach for the dynamic electrothermal analysis of SiC power MOSFETs. The strategy relies on a circuit representation of the whole device, where the electrothermal feedback is enabled through an equivalent electrical network, and the elementary device cell is described by a novel behavioral model accounting for the non-intuitive temperature dependences of key physical parameters.
SPICE modeling and dynamic electrothermal simulation of SiC power MOSFETs / D'Alessandro, V., Magnani, A., Riccio, M., Breglio, G., Irace, A., Rinaldi, N., Alberto, C.. - (2014), pp. 285-288. (IEEE 26th International Symposium on Power Semiconductor Devices and ICs (ISPSD) Waikoloa, Hawaii, USA Jun. 2014) [10.1109/ISPSD.2014.6856032].
SPICE modeling and dynamic electrothermal simulation of SiC power MOSFETs
d'ALESSANDRO, VINCENZO;MAGNANI, ALESSANDRO;RICCIO, MICHELE;BREGLIO, GIOVANNI;IRACE, ANDREA;RINALDI, NICCOLO';
2014
Abstract
This paper presents a computationally efficient 3-D simulation approach for the dynamic electrothermal analysis of SiC power MOSFETs. The strategy relies on a circuit representation of the whole device, where the electrothermal feedback is enabled through an equivalent electrical network, and the elementary device cell is described by a novel behavioral model accounting for the non-intuitive temperature dependences of key physical parameters.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
