The compact SPICE modeling of Reverse Conducting IGBTs is presented in this paper. The proposed approach is based on a quasi-2D formulation with the joint use of IGBT and PiN diode sub-circuits. Lateral currents paths and turn-on forward delay are considered into the model. Self-heating effect for both IGBT and diode regions is take into account, enabling reliable electro-thermal analysis. The model is calibrated to fit experimental data of a commercial 20 A-1.2 kV rated device. As a compelling example to prove the effectiveness of the model, the results of an electro-thermal simulation on a quasi-resonant converter are compared with experiments. © 2016 IEEE.
An electro-thermal SPICE model for Reverse Conducting IGBT: Simulation and experimental validation / Riccio, Michele; Tedesco, M.; Mirone, Paolo; De Falco, G.; Maresca, Luca; Breglio, Giovanni; Irace, Andrea. - 2016-July:(2016), pp. 343-346. [10.1109/ISPSD.2016.7520848]
An electro-thermal SPICE model for Reverse Conducting IGBT: Simulation and experimental validation
RICCIO, MICHELE;MIRONE, PAOLO;MARESCA, LUCA;BREGLIO, GIOVANNI;IRACE, ANDREA
2016
Abstract
The compact SPICE modeling of Reverse Conducting IGBTs is presented in this paper. The proposed approach is based on a quasi-2D formulation with the joint use of IGBT and PiN diode sub-circuits. Lateral currents paths and turn-on forward delay are considered into the model. Self-heating effect for both IGBT and diode regions is take into account, enabling reliable electro-thermal analysis. The model is calibrated to fit experimental data of a commercial 20 A-1.2 kV rated device. As a compelling example to prove the effectiveness of the model, the results of an electro-thermal simulation on a quasi-resonant converter are compared with experiments. © 2016 IEEE.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
