Driven by the pursuit of high-performance electronic devices, research into novel materials with properties appropriate for cryogenic applications has unveiled the exceptional properties of the rare-earth nitride series of intrinsic ferromagnetic semiconductors. Here we report on the field, focusing on advances in thin film growth, the understanding of the magnetism and electronic structure, and developments which enable applications in cryogenic electronic devices.

Rare-earth nitrides: fundamental advances and applications in cryogenic electronics / Holmes-Hewett, W. F.; Miller, J. D.; Ahmad, H. G.; Granville, S.; Ruck, B. J.. - In: JOURNAL OF PHYSICS D. APPLIED PHYSICS. - ISSN 0022-3727. - 58:34(2025). [10.1088/1361-6463/adf1b2]

Rare-earth nitrides: fundamental advances and applications in cryogenic electronics

Ahmad H. G.;
2025

Abstract

Driven by the pursuit of high-performance electronic devices, research into novel materials with properties appropriate for cryogenic applications has unveiled the exceptional properties of the rare-earth nitride series of intrinsic ferromagnetic semiconductors. Here we report on the field, focusing on advances in thin film growth, the understanding of the magnetism and electronic structure, and developments which enable applications in cryogenic electronic devices.
2025
Rare-earth nitrides: fundamental advances and applications in cryogenic electronics / Holmes-Hewett, W. F.; Miller, J. D.; Ahmad, H. G.; Granville, S.; Ruck, B. J.. - In: JOURNAL OF PHYSICS D. APPLIED PHYSICS. - ISSN 0022-3727. - 58:34(2025). [10.1088/1361-6463/adf1b2]
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11588/1017291
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