A complete physical model for the Lateral IGBT in Thin Silicon On Insulator technology is presented for the first time. The model is oriented to circuit simulators and is implemented in Pspice. Model results are compared against experimental results and Medici numerical simulations. Numerical convergence performance of the model is verified through the simulation of a half bridge circuit and a complete flyback switch mode power supply.
A compact model for thin SOI LIGBTs: description, experimental verification and system application / Napoli, Ettore; V., Pathirana; F., Udrea; G., Bonnet; T., Trajkovic; G., Amaratunga. - (2005), pp. 95-98. (Intervento presentato al convegno International Symposium on Power Semiconductor Devices and ICs, ISPSD'05 tenutosi a Santa Barbara (CA) nel May 23-26 2005) [10.1109/ISPSD.2005.1487959].
A compact model for thin SOI LIGBTs: description, experimental verification and system application
NAPOLI, ETTORE;
2005
Abstract
A complete physical model for the Lateral IGBT in Thin Silicon On Insulator technology is presented for the first time. The model is oriented to circuit simulators and is implemented in Pspice. Model results are compared against experimental results and Medici numerical simulations. Numerical convergence performance of the model is verified through the simulation of a half bridge circuit and a complete flyback switch mode power supply.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
