The paper presents an innovative design concept for SOI lateral power devices that exploits the deep depletion of the substrate to dynamically increase the voltage rating ofSOI devices. Numerical simulations of the device and experimental results demonstrate that the proposed physical effect is a viable way to design a whole new class of lateral power devices.
DEEP DEPLETION SOI POWER DEVICES / Napoli, Ettore. - 1:(2006), pp. 3-12. (Intervento presentato al convegno International Semiconductor Conference, CAS'06 tenutosi a Sinaia, Romania nel 27-29 Sept. 2006) [10.1109/SMICND.2006.283922].
DEEP DEPLETION SOI POWER DEVICES
NAPOLI, ETTORE
2006
Abstract
The paper presents an innovative design concept for SOI lateral power devices that exploits the deep depletion of the substrate to dynamically increase the voltage rating ofSOI devices. Numerical simulations of the device and experimental results demonstrate that the proposed physical effect is a viable way to design a whole new class of lateral power devices.File in questo prodotto:
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