The paper presents a one dimensional model of the duration of the increased breakdown voltage phase in Deep Depletion power devices. The model includes the effect of bulk generation and space charge generation and is verified against numerical simulations of a Si-BOX-Si structure. The model is compared with experimental results regarding the duration of the increased breakdown voltage phase in a power LDMOS in SOI technology. The results show that the interface states are probably the limiting factor for the duration of the increased breakdown voltage phase.
One dimensional model for the duration of the high breakdown phase in deep depletion power devices / Napoli, Ettore. - STAMPA. - (2007), pp. 403-406. (Intervento presentato al convegno 30th International Semiconductor Conference, CAS'07 tenutosi a Sinaia (RO) nel October 15-17, 2007) [10.1109/SMICND.2007.4519744].
One dimensional model for the duration of the high breakdown phase in deep depletion power devices
NAPOLI, ETTORE
2007
Abstract
The paper presents a one dimensional model of the duration of the increased breakdown voltage phase in Deep Depletion power devices. The model includes the effect of bulk generation and space charge generation and is verified against numerical simulations of a Si-BOX-Si structure. The model is compared with experimental results regarding the duration of the increased breakdown voltage phase in a power LDMOS in SOI technology. The results show that the interface states are probably the limiting factor for the duration of the increased breakdown voltage phase.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
