Vacuum ultra-violet (VUV) laser harmonics have been generated in a noble gas jet, which, combined with a standard spectrophotometer, have allowed measurements of the reflectance of porous silicon over a wide energy spectral range from 1 to 16 eV. Porous silicon dielectric function was, then, deduced from reflectance measurements by Kramers–Kronig analysis. Data are found to be in good agreement with those reported in literature, thus showing that laser harmonics represent a new, alternative, and suitable VUV source for optical characterisation of materials such as semiconductors and thin films.
Application of VUV laser harmonic radiation to the measurement of porous silicon dielectric function / F., De Filippo; DE LISIO, Corrado; Maddalena, Pasqualino; Solimeno, Salvatore; G., Lérondel; Altucci, Carlo. - In: OPTICS AND LASERS IN ENGINEERING. - ISSN 0143-8166. - STAMPA. - 37:(2002), pp. 611-620.
Application of VUV laser harmonic radiation to the measurement of porous silicon dielectric function
DE LISIO, CORRADO;MADDALENA, PASQUALINO;SOLIMENO, SALVATORE;ALTUCCI, CARLO
2002
Abstract
Vacuum ultra-violet (VUV) laser harmonics have been generated in a noble gas jet, which, combined with a standard spectrophotometer, have allowed measurements of the reflectance of porous silicon over a wide energy spectral range from 1 to 16 eV. Porous silicon dielectric function was, then, deduced from reflectance measurements by Kramers–Kronig analysis. Data are found to be in good agreement with those reported in literature, thus showing that laser harmonics represent a new, alternative, and suitable VUV source for optical characterisation of materials such as semiconductors and thin films.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
