Porous-silicon reflectance has been determined over a large energy range, from 1 eV to 16 eV, by combining a NIR/visible/UV spectrometer with a new VUV light source as laser-harmonic radiation. The porous-silicon dielectric function was deduced from reflectance measurements by Kramers-Kronig analysis. We point out that, for the first time, laser harmonics have been applied in the optical characterization of materials as a new and suitable alternative to synchrotron radiation.
Determination of the dielectric function of porous silicon by high-order laser-harmonic radiation / F., DE FILIPPO; DE LISIO, Corrado; Maddalena, Pasqualino; G., Lerondel; T., Yao; Altucci, Carlo. - In: APPLIED PHYSICS. A, MATERIALS SCIENCE & PROCESSING. - ISSN 0947-8396. - STAMPA. - 73:6(2001), pp. 737-740. [10.1007/s003390100908]
Determination of the dielectric function of porous silicon by high-order laser-harmonic radiation
DE LISIO, CORRADO;MADDALENA, PASQUALINO;ALTUCCI, CARLO
2001
Abstract
Porous-silicon reflectance has been determined over a large energy range, from 1 eV to 16 eV, by combining a NIR/visible/UV spectrometer with a new VUV light source as laser-harmonic radiation. The porous-silicon dielectric function was deduced from reflectance measurements by Kramers-Kronig analysis. We point out that, for the first time, laser harmonics have been applied in the optical characterization of materials as a new and suitable alternative to synchrotron radiation.| File | Dimensione | Formato | |
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