The first experimental method to separately measure the hole and the electron mobilities as a function of the injection level is presented. The carrier mobilities are extracted from impulsive measurements of the resistance associated with a n+-ν-n + (p+-π-p+) structure, where the conductivity of the intermediate layer is controlled by the injection of an incorporated p-n junction diode. Two-dimensional numerical simulation is used to assess the accuracy of the proposed measurement technique. Experimental results obtained at room temperature on both n-type and p-type materials are presented and compared to existing analytical mobility models
Electrical measurement of electron and hole mobilities as a function of injection level in silicon / S., Bellone; G. V., Persiano; Strollo, ANTONIO GIUSEPPE MARIA. - In: IEEE TRANSACTIONS ON ELECTRON DEVICES. - ISSN 0018-9383. - 43:(1996), pp. 1459-1465. [10.1109/16.535333]
Electrical measurement of electron and hole mobilities as a function of injection level in silicon
STROLLO, ANTONIO GIUSEPPE MARIA
1996
Abstract
The first experimental method to separately measure the hole and the electron mobilities as a function of the injection level is presented. The carrier mobilities are extracted from impulsive measurements of the resistance associated with a n+-ν-n + (p+-π-p+) structure, where the conductivity of the intermediate layer is controlled by the injection of an incorporated p-n junction diode. Two-dimensional numerical simulation is used to assess the accuracy of the proposed measurement technique. Experimental results obtained at room temperature on both n-type and p-type materials are presented and compared to existing analytical mobility modelsI documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
