The mechanism of field-effect doping in the 123 high critical temperature superconductors (HTS) has been investigated by x-ray absorption spectroscopy in the presence of an electric field. We demonstrate that holes are created at the CuO chains of the charge reservoir and that field-effect doping of the CuO2 planes occurs by charge transfer, from the chains to the planes, of a fraction of the overall induced holes. The electronic properties of the charge reservoir and of the dielectric-HTS interface determine the electric field doping of the CuO2 planes.
Indirect electric field doping of the CuO2 planes of the cuprate NdBa2Cu3O7 superconductor / Salluzzo, Marco; G., Ghiringhelli; J. C., Cesar; N. B., Brookes; M. G., De Luca; F., Fracassi; Vaglio, Ruggero. - In: PHYSICAL REVIEW LETTERS. - ISSN 0031-9007. - STAMPA. - 100:(2008), pp. 056810-1-056810-4. [10.1103/PhysRevLett.100.056810]
Indirect electric field doping of the CuO2 planes of the cuprate NdBa2Cu3O7 superconductor
SALLUZZO, MARCO;VAGLIO, RUGGERO
2008
Abstract
The mechanism of field-effect doping in the 123 high critical temperature superconductors (HTS) has been investigated by x-ray absorption spectroscopy in the presence of an electric field. We demonstrate that holes are created at the CuO chains of the charge reservoir and that field-effect doping of the CuO2 planes occurs by charge transfer, from the chains to the planes, of a fraction of the overall induced holes. The electronic properties of the charge reservoir and of the dielectric-HTS interface determine the electric field doping of the CuO2 planes.File | Dimensione | Formato | |
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