This paper describes a mixed signal approach to micro-hotplate temperature control technique using digital On-off control logic. The novel micro-hotplate used for this purpose is based on standard 600nm CMOS technology and contains a metal micro-heater, a (parasitic) bipolar transistor temperature sensor and an interdigitated electrode in a dielectric membrane. The micro-hotplate and the mixed-signal controller circuit are integrated on a single chip. Typically such micro-hotplate are used in MEMS gas sensing application where we believe on-chip integration will enable accurate temperature monitoring and control with the added benefit of producing low power, low cost gas sensors.

Mixed signal temperature control circuit for on-chip CMOS gas sensor / Garofalo, Valeria; P. K., Guha; S. Z., Ali; S., Santra; M. F., Chowdhury; Napoli, Ettore; F., Udrea. - 2:(2009), pp. 495-498. (Intervento presentato al convegno International Semiconductor Conference, 2009. CAS 2009 tenutosi a Sinaia (RO) nel 12-14 Oct. 2009) [10.1109/SMICND.2009.5336665].

Mixed signal temperature control circuit for on-chip CMOS gas sensor

GAROFALO, VALERIA;NAPOLI, ETTORE;
2009

Abstract

This paper describes a mixed signal approach to micro-hotplate temperature control technique using digital On-off control logic. The novel micro-hotplate used for this purpose is based on standard 600nm CMOS technology and contains a metal micro-heater, a (parasitic) bipolar transistor temperature sensor and an interdigitated electrode in a dielectric membrane. The micro-hotplate and the mixed-signal controller circuit are integrated on a single chip. Typically such micro-hotplate are used in MEMS gas sensing application where we believe on-chip integration will enable accurate temperature monitoring and control with the added benefit of producing low power, low cost gas sensors.
2009
9781424444137
Mixed signal temperature control circuit for on-chip CMOS gas sensor / Garofalo, Valeria; P. K., Guha; S. Z., Ali; S., Santra; M. F., Chowdhury; Napoli, Ettore; F., Udrea. - 2:(2009), pp. 495-498. (Intervento presentato al convegno International Semiconductor Conference, 2009. CAS 2009 tenutosi a Sinaia (RO) nel 12-14 Oct. 2009) [10.1109/SMICND.2009.5336665].
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11588/359755
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