Ultrarapid anodic dissolution of silicon in HF-free solutions is reported. Although the etch rates are insignificant up to a potential of 25 V, when shifting the potential to higher values of 35–55 V the silicon etch rate reached a record value of more than 30 m/min. In addition, surface morphologies are notably affected by the applied potential, modifying the surface from a porous one to a partially polished one.
Achieving Extreme Etching Rates by Overcoming SiliconPassivity / T., Zaid; D., Starosvetsky; Irace, Andrea; DE LAURENTIS, Martina; Y., Ein Elia. - In: ELECTROCHEMICAL AND SOLID-STATE LETTERS. - ISSN 1099-0062. - STAMPA. - 13:6(2010), pp. H185-H187. [10.1149/1.3358141]
Achieving Extreme Etching Rates by Overcoming SiliconPassivity
IRACE, ANDREA;DE LAURENTIS, MARTINA;
2010
Abstract
Ultrarapid anodic dissolution of silicon in HF-free solutions is reported. Although the etch rates are insignificant up to a potential of 25 V, when shifting the potential to higher values of 35–55 V the silicon etch rate reached a record value of more than 30 m/min. In addition, surface morphologies are notably affected by the applied potential, modifying the surface from a porous one to a partially polished one.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
