Electro-thermal characterization of AlGaN/GaN HEMT on Silicon Microstrip Technology

In this work an experimental assessment of the electro-thermal behaviour of AlGaN/GaN HEMT on HR-Si Microstrip Technology is given. Self-heating effects and temperature rise have been evaluated on 1 mm active device periphery when HR-Si is lapped down to 50 lm exploiting infrared thermal DC characterization method to validate thermal simulations. Maximum channel temperature and thermal resistance of the structure has been extracted at different power dissipation conditions. For the same device periphery, the Gate-to-Gate pitch influence has also been experimentally investigated and correlated to the channel temperature. Finally, relevant information about the maximum power dissipation has been pointed out, and an accurate description of the electro-thermal behavior observed experimentally is given.