A model is developed for the current in a small-geometry p+n junction. It is based on a two-dimensional analytical solution for the continuity equation in the low-injection regime. Results for both the minority-carriers concentration and current are presented.
Analytical two-dimensional model for minority-carrier diffusion from small-geometry pn junction / Strollo, ANTONIO GIUSEPPE MARIA; P., Spirito. - In: ELECTRONICS LETTERS. - ISSN 0013-5194. - STAMPA. - 25:(1989), pp. 130-131. [10.1049/el:19890095]
Analytical two-dimensional model for minority-carrier diffusion from small-geometry pn junction
STROLLO, ANTONIO GIUSEPPE MARIA;
1989
Abstract
A model is developed for the current in a small-geometry p+n junction. It is based on a two-dimensional analytical solution for the continuity equation in the low-injection regime. Results for both the minority-carriers concentration and current are presented.File in questo prodotto:
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