We investigate pulsed laser deposition of LaGaO3/SrTiO3 at 10^-1 mbar oxygen background pressure, demonstrating the critical effect of the target-to-substrate distance, dTS, on the interface sheet resistance, Rs. The interface turns from insulating to metallic by progressively decreasing dTS. The analysis of the LaGaO3 plume evidences the important role of the plume propagation dynamics on the interface properties. These results demonstrate the growth of conducting interfaces at an oxygen pressure of 10^-1 mbar, an experimental condition where a well-oxygenated heterostructures with a reduced content of oxygen defects is expected.
Critical influence of target-to-substrate distance on conductive properties of LaGaO3/SrTiO3 interfaces deposited at 10^−1 mbar oxygen pressure / C., Aruta; Amoruso, Salvatore; Ausanio, Giovanni; Bruzzese, Riccardo; DI GENNARO, Emiliano; M., Lanzano; F., Miletto Granozio; Muhammad, Riaz; Sambri, Alessia; SCOTTI DI UCCIO, Umberto; X., Wang. - In: APPLIED PHYSICS LETTERS. - ISSN 1077-3118. - 101:31(2012), pp. 031602-1-031602-5. [10.1063/1.4737650]
Critical influence of target-to-substrate distance on conductive properties of LaGaO3/SrTiO3 interfaces deposited at 10^−1 mbar oxygen pressure
AMORUSO, SALVATORE;AUSANIO, GIOVANNI;BRUZZESE, RICCARDO;DI GENNARO, EMILIANO;SAMBRI, ALESSIA;SCOTTI DI UCCIO, UMBERTO;
2012
Abstract
We investigate pulsed laser deposition of LaGaO3/SrTiO3 at 10^-1 mbar oxygen background pressure, demonstrating the critical effect of the target-to-substrate distance, dTS, on the interface sheet resistance, Rs. The interface turns from insulating to metallic by progressively decreasing dTS. The analysis of the LaGaO3 plume evidences the important role of the plume propagation dynamics on the interface properties. These results demonstrate the growth of conducting interfaces at an oxygen pressure of 10^-1 mbar, an experimental condition where a well-oxygenated heterostructures with a reduced content of oxygen defects is expected.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.