TCAD simulators are a consolidate tool in the field of the semiconductor research because of their predictive capability. However, an accurate calibration of the models is needed in order to get quantitative accurate results. In this work a calibration procedure of the TCAD elementary cell, specific for Trench IGBT with a blocking voltage of 600 V, is presented. It is based on the error minimization between the experimental and the simulated terminal curves of the device at two temperatures. The procedure is applied to a PT-IGBT and a good predictive capability is showed in the simulation of both the short-circuit and turn-off tests. © © 2013 Elsevier B.V. All rights reserved.
Automatic TCAD model calibration for multi-cellular Trench-IGBTs / Maresca, Luca; Breglio, Giovanni; Irace, Andrea. - In: SOLID-STATE ELECTRONICS. - ISSN 0038-1101. - 91:(2014), pp. 36-43. [10.1016/j.sse.2013.09.004]
Automatic TCAD model calibration for multi-cellular Trench-IGBTs
MARESCA, LUCA;BREGLIO, GIOVANNI;IRACE, ANDREA
2014
Abstract
TCAD simulators are a consolidate tool in the field of the semiconductor research because of their predictive capability. However, an accurate calibration of the models is needed in order to get quantitative accurate results. In this work a calibration procedure of the TCAD elementary cell, specific for Trench IGBT with a blocking voltage of 600 V, is presented. It is based on the error minimization between the experimental and the simulated terminal curves of the device at two temperatures. The procedure is applied to a PT-IGBT and a good predictive capability is showed in the simulation of both the short-circuit and turn-off tests. © © 2013 Elsevier B.V. All rights reserved.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
