Actual design of power devices considers ruggedness in harsh operating conditions as mandatory to meet the always-increasing demand for lifetime device reliability, this being particularly true when the devices are used in safety-critical automotive applications. In this paper we show, for the first time, that a careful engineering of the standard cell geometry can shift the avalanche current from termination to active region and eventually lead to increased avalanche ruggedness without impacting the forward capability of a 1200V-rated field-stop trench IGBT designed for power traction purposes.
Cell pitch influence on the current distribution during avalanche operation of trench IGBTs: Design issues to increase UIS ruggedness2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's (ISPSD) / Riccio, Michele; Maresca, Luca; DE FALCO, Giuseppe; Breglio, Giovanni; Irace, Andrea; Spirito, Paolo; Y., Iwahashi. - (2014), pp. 111-114. (Intervento presentato al convegno International Symposium on Power Semiconductor Devices and ICs) [10.1109/ISPSD.2014.6855988].
Cell pitch influence on the current distribution during avalanche operation of trench IGBTs: Design issues to increase UIS ruggedness2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's (ISPSD)
RICCIO, MICHELE;MARESCA, LUCA;DE FALCO, GIUSEPPE;BREGLIO, GIOVANNI;IRACE, ANDREA;SPIRITO, PAOLO;
2014
Abstract
Actual design of power devices considers ruggedness in harsh operating conditions as mandatory to meet the always-increasing demand for lifetime device reliability, this being particularly true when the devices are used in safety-critical automotive applications. In this paper we show, for the first time, that a careful engineering of the standard cell geometry can shift the avalanche current from termination to active region and eventually lead to increased avalanche ruggedness without impacting the forward capability of a 1200V-rated field-stop trench IGBT designed for power traction purposes.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
