In this work we present a novel simulation environment for analysis of electro-thermal interaction in power semiconductor devices. The developed solution is based on the joint use of ELDO-COMSOL simulators in an iterative scheme between an electrical 2D SPICE network and 3D FEM thermal solver. The power device is described with a multi-cellular approach using proper temperature dependent SPICE library and macro-cell concept. The thermal problem is solved on a 3D domain considering the full chip structure, including package and bond-wires. In order to validate the proposed approach, simulations during short-circuit tests have been performed considering a commercial STripFET II Power-MOSFET. Finally the simulation results have been compared with transient InfraRed (IR) thermal measurements proving the effectiveness of the new simulator.
ELDO-COMSOL based 3D electro-thermal simulations of power semiconductor devices2014 Semiconductor Thermal Measurement and Management Symposium (SEMI-THERM) / DE FALCO, Giuseppe; Riccio, Michele; Romano, Gianpaolo; Maresca, Luca; Irace, Andrea; Breglio, Giovanni. - (2014), pp. 35-40. (Intervento presentato al convegno Semiconductor Thermal Measurement and Management Symposium (SEMI-THERM), 2014 30th Annual) [10.1109/SEMI-THERM.2014.6892212].
ELDO-COMSOL based 3D electro-thermal simulations of power semiconductor devices2014 Semiconductor Thermal Measurement and Management Symposium (SEMI-THERM)
DE FALCO, GIUSEPPE;RICCIO, MICHELE;ROMANO, GIANPAOLO;MARESCA, LUCA;IRACE, ANDREA;BREGLIO, GIOVANNI
2014
Abstract
In this work we present a novel simulation environment for analysis of electro-thermal interaction in power semiconductor devices. The developed solution is based on the joint use of ELDO-COMSOL simulators in an iterative scheme between an electrical 2D SPICE network and 3D FEM thermal solver. The power device is described with a multi-cellular approach using proper temperature dependent SPICE library and macro-cell concept. The thermal problem is solved on a 3D domain considering the full chip structure, including package and bond-wires. In order to validate the proposed approach, simulations during short-circuit tests have been performed considering a commercial STripFET II Power-MOSFET. Finally the simulation results have been compared with transient InfraRed (IR) thermal measurements proving the effectiveness of the new simulator.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
