This paper presents Si/SiGe:C and InP/GaAsSb HBTs which feature specific assets to address submillimeter-wave and THz applications. Process and modeling status and challenges are reviewed. The specific topics of thermal and substrate effects, reliability, and HF measurements are also discussed.
Si/SiGe:C and InP/GaAsSb heterojunction bipolar transistors for THz applications / Chevalier, Pascal; Schroeter, Michael; Bolognesi, Colombo R.; D'Alessandro, Vincenzo; Alexandrova, Maria; Boeck, Josef; Fluckinger, Ralf; Frégonèse, Sebastien; Heinemann, Bernd; Jungemann, Christoph; Lovblom, Rickard; Maneux, Cristell; Ostinelli, Olivier; Pawlak, Andreas; Rinaldi, Niccolo'; Rucker, Holger; Wedel, Gerald; Zimmer, Thomas. - In: PROCEEDINGS OF THE IEEE. - ISSN 0018-9219. - 105:6(2017), pp. 1035-1050. [10.1109/JPROC.2017.2669087]
Si/SiGe:C and InP/GaAsSb heterojunction bipolar transistors for THz applications
Vincenzo d'Alessandro;Niccolo' Rinaldi;
2017
Abstract
This paper presents Si/SiGe:C and InP/GaAsSb HBTs which feature specific assets to address submillimeter-wave and THz applications. Process and modeling status and challenges are reviewed. The specific topics of thermal and substrate effects, reliability, and HF measurements are also discussed.| File | Dimensione | Formato | |
|---|---|---|---|
|
J050_Chevalier17_ProcIEEE.pdf
solo utenti autorizzati
Tipologia:
Altro materiale allegato
Licenza:
Accesso privato/ristretto
Dimensione
1.31 MB
Formato
Adobe PDF
|
1.31 MB | Adobe PDF | Visualizza/Apri Richiedi una copia |
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
