We report the study of anatase TiO2(001)-oriented thin films grown by pulsed laser deposition on LaAlO3(001). A combination of in situ and ex situ methods has been used to address both the origin of the Ti(3+)-localized states and their relationship with the structural and electronic properties on the surface and the subsurface. Localized in-gap states are analyzed using resonant X-ray photoelectron spectroscopy and are related to the Ti(3+) electronic configuration, homogeneously distributed over the entire film thickness. We find that an increase in the oxygen pressure corresponds to an increase in Ti(3+) only in a well-defined range of deposition pressure; outside this range, Ti(3+) and the strength of the in-gap states are reduced.
Role of Oxygen Deposition Pressure in the Formation of Ti Defect States in TiO2(001) Anatase Thin Films / Gobaut, Benoit; Orgiani, Pasquale; Sambri, Alessia; DI GENNARO, Emiliano; Aruta, Carmela; Borgatti, Francesco; Lollobrigida, Valerio; Céolin, Denis; Rueff, Jean Pascal; Ciancio, Regina; Bigi, Chiara; Das, Pranab Kumar; Fujii, Jun; Krizmancic, Damjan; Torelli, Piero; Vobornik, Ivana; Rossi, Giorgio; Miletto Granozio, Fabio; SCOTTI DI UCCIO, Umberto; Panaccione, Giancarlo. - In: ACS APPLIED MATERIALS & INTERFACES. - ISSN 1944-8244. - (2017). [10.1021/acsami.7b03181]
Role of Oxygen Deposition Pressure in the Formation of Ti Defect States in TiO2(001) Anatase Thin Films
SAMBRI, ALESSIA;DI GENNARO, EMILIANO;SCOTTI DI UCCIO, UMBERTO;
2017
Abstract
We report the study of anatase TiO2(001)-oriented thin films grown by pulsed laser deposition on LaAlO3(001). A combination of in situ and ex situ methods has been used to address both the origin of the Ti(3+)-localized states and their relationship with the structural and electronic properties on the surface and the subsurface. Localized in-gap states are analyzed using resonant X-ray photoelectron spectroscopy and are related to the Ti(3+) electronic configuration, homogeneously distributed over the entire film thickness. We find that an increase in the oxygen pressure corresponds to an increase in Ti(3+) only in a well-defined range of deposition pressure; outside this range, Ti(3+) and the strength of the in-gap states are reduced.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
