Reverse Conducting IGBTs (RC-IGBTs) represent a valuable solution to increase power density in IGBT modules, to reduce packaging, bonding, and silicon costs in fabrication. However, the increased power density and the presence of a monolithically integrated PiN diode, entail careful evaluation of thermal issues to guarantee device reliability. In this work, a fast, yet accurate, compact electrothermal (ET) simulator for wide-area RC-IGBTs is proposed. The simulator is implemented in ELDO environment. A 3-D finite-difference time-domain method for heat equation solution and a temperature dependent SPICE model of RC-IGBT are jointly used for fast ET simulations of the device. Three different device layouts are considered and simulated during normal and harsh working conditions. Finally, the simulator is used to evaluate the temperature distribution within the device during its operation in a typical circuit application.
Fully-Coupled Electrothermal Simulation of Wide-Area Reverse Conducting IGBTs / Riccio, M.; Borghese, A.; Maresca, L.; Breglio, G.; Irace, A.. - (2019), pp. 1-4. (Intervento presentato al convegno 25th International Workshop on Thermal Investigations of ICs and Systems, THERMINIC 2019 tenutosi a ita nel 2019) [10.1109/THERMINIC.2019.8923497].
Fully-Coupled Electrothermal Simulation of Wide-Area Reverse Conducting IGBTs
Riccio M.;Borghese A.;Maresca L.;Breglio G.;Irace A.
2019
Abstract
Reverse Conducting IGBTs (RC-IGBTs) represent a valuable solution to increase power density in IGBT modules, to reduce packaging, bonding, and silicon costs in fabrication. However, the increased power density and the presence of a monolithically integrated PiN diode, entail careful evaluation of thermal issues to guarantee device reliability. In this work, a fast, yet accurate, compact electrothermal (ET) simulator for wide-area RC-IGBTs is proposed. The simulator is implemented in ELDO environment. A 3-D finite-difference time-domain method for heat equation solution and a temperature dependent SPICE model of RC-IGBT are jointly used for fast ET simulations of the device. Three different device layouts are considered and simulated during normal and harsh working conditions. Finally, the simulator is used to evaluate the temperature distribution within the device during its operation in a typical circuit application.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
