SiC MOSFETs have already replace silicon-based device in power applications, even if some technological issues are still not solved. The most important of them is related to the complex traps distribution at SiC/SiO2 interface. Interface traps affect the overall device behavior, modifying channel mobility and introducing hysteresis. In this work experimental C-V and I-V curves are carried out on various commercial SiC MOSFET at different temperatures. The focus is the comparison of hysteresis arising in trench and planar SiC MOSFETs.
Experimental Analysis of C-V and I-V Curves Hysteresis in SiC MOSFETs / Matacena, I.; Maresca, L.; Riccio, M.; Irace, A.; Breglio, G.; Daliento, S.. - 1062:(2022), pp. 669-675. (Intervento presentato al convegno 13th European Conference on Silicon Carbide and Related Materials, ECSCRM 2021 nel 2021) [10.4028/p-bzki64].
Experimental Analysis of C-V and I-V Curves Hysteresis in SiC MOSFETs
Matacena I.;Maresca L.;Riccio M.;Irace A.;Breglio G.;Daliento S.
2022
Abstract
SiC MOSFETs have already replace silicon-based device in power applications, even if some technological issues are still not solved. The most important of them is related to the complex traps distribution at SiC/SiO2 interface. Interface traps affect the overall device behavior, modifying channel mobility and introducing hysteresis. In this work experimental C-V and I-V curves are carried out on various commercial SiC MOSFET at different temperatures. The focus is the comparison of hysteresis arising in trench and planar SiC MOSFETs.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
