IRIS

DALIENTO, SANTOLO

DALIENTO, SANTOLO  

DIPARTIMENTO DI INGEGNERIA ELETTRICA E TECNOLOGIE DELL'INFORMAZIONE  

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Risultati 1 - 20 di 174 (tempo di esecuzione: 0.054 secondi).
Titolo Tipologia Data di pubblicazione Autore(i) File
Two Dimensional Analysis of a Test Structure for Lifetime Profile Measurements 1.1 Articolo in rivista 1995 Daliento, Santolo; N., Rinaldi; A., Sanseverino; P., Spirito
Analytical modelling and minority current measurements for the determination of the emitter surface recombination velocity in silicon solar cells 1.1 Articolo in rivista 2007 Daliento, Santolo; Mele, L; Bobeico, E; Lancellotti, L; Morvillo, P.
Induced degradation on c-Si solar cells for concentration terrestrial applications 1.1 Articolo in rivista 2010 L., Lancellotti; R., Fucci; A., Romano; A., Sarno; Daliento, Santolo
Experimental study on power consumption in lifetime engineered power diodes 1.1 Articolo in rivista 2009 Daliento, Santolo; L., Mele; Spirito, Paolo; R., Carta; L., Merlin
Experimental measurements of recombination lifetime in proton irradiated power devices 4.1 Articoli in Atti di convegno 2000 Daliento, Santolo; A., Sanseverino; Spirito, Paolo; G., Busatto; J., Wyss
Helium implantation in silicon: detailed experimental analysis of resistivity and lifetime profiles as a function of the implantation dose and energy 4.1 Articoli in Atti di convegno 2006 Daliento, Santolo; L., Mele; Spirito, Paolo; Gialanella, Lucio; Romano, Mario; Limata, BENEDICTA NORMANNA; R., Carta; L., Bellemo
An experimental analysis of localized lifetime and resistivity control by helium implant in Si 4.1 Articoli in Atti di convegno 2005 Daliento, Santolo; L., Mele; Spirito, Paolo; Gialanella, Lucio; Romano, Mario; B. N., Limata; R., Carta; L., Bellemo
An Optical Technique to Measure the Bulk Lifetime and the Surface Recombination Velocity in Silicon Samples Based on a Laser Diode Probe System 1.1 Articolo in rivista 1998 A., Cutolo; Daliento, Santolo; A., Sanseverino; G. F., Vitale; L., Zeni
Recombination Centers Identification in Very Thin Silicon Epitaxial Layers via Lifetime Measurements 1.1 Articolo in rivista 1996 Daliento, Santolo; A., Sanseverino; P. M., Sarro; P., Spirito; L., Zeni
Experimental Measurements of Majority and Minority Carrier Lifetime Profile in SI Epilayers by the Use of an Improved OCVD Method 1.1 Articolo in rivista 2005 S., Bellone; G. D., Licciardo; Daliento, Santolo; L., Mele
Approximate closed form analytical solution for minority carrier transport in opaque heavily doped regions under illuminated conditions 1.1 Articolo in rivista 2006 Daliento, Santolo; L., Mele
AN ELECTRICAL TECHNIQUE FOR THE MEASUREMENT OF THE INTERFACE RECOMBINATION VELOCITY BASED ON A THREE-TERMINAL TEST STRUCTURE 1.1 Articolo in rivista 2003 Daliento, Santolo; Spirito, Paolo; Sanseverino, Annunziata; F., Roca
An Improved Test Structure for Recombination Lifetime Profile Measurements in Very Thick Silicon Wafers 1.1 Articolo in rivista 1999 Daliento, Santolo; A., Sanseverino; P., Spirito
Characterization of recombination centers in Si epilayers after He implantation by direct measurement of local lifetime distribution with the ac profiling technique 1.1 Articolo in rivista 2004 Spirito, Paolo; Daliento, Santolo; A., Sanseverino; Gialanella, Lucio; Romano, Mario; Limata, BENEDICTA NORMANNA; R., Carta; L., Bellemo
Two dimensional analysis of a test structure for lifetime profile measurements 1.1 Articolo in rivista 1995 Daliento, Santolo; Rinaldi, Niccolo'; Sanseverino, Annunziata; P., Spirito
Lifetime and resistivity modifications induced by helium implantation in silicon: experimental analysis with the ac profiling technique 1.1 Articolo in rivista 2008 Daliento, Santolo; Mele, L; Spirito, Paolo; Gialanella, Lucio; Limata, BENEDICTA NORMANNA
AN ELECTRICAL TECHNIQUE FOR THE MEASUREMENT OF THE SURFACE RECOMBINATION VELOCITY 2.1 Contributo in volume (Capitolo o Saggio) 2002 Daliento, Santolo; Spirito, Paolo; Sanseverino, Annunziata; G., Contento; N., Martucciello; I., Nasti; F., Roca
A Measurement Method of the Ideal I-V Characteristic of Diodes Up to the Built-in Voltage Limit 1.1 Articolo in rivista 1999 S., Bellone; Daliento, Santolo; A., Sanseverino
A new test structure for lifetime profiling in very thick lightly doped silicon material 4.1 Articoli in Atti di convegno 1998 Daliento, Santolo; A., Sanseverino; Spirito, Paolo
Parametric Description on the Effect on Electron Irradiation on Recombination Lifetime in Silicon Layer: An Experimental Approach 1.1 Articolo in rivista 1999 Daliento, Santolo; A., Sanseverino; P., Spirito; L., Zeni