Normally-off p-GaN HEMTs with Schottky-type gate are becoming of common adoption in both industrial and consumer electronic market. The presence of a gate current with a remarkable dependence on the temperature of the device allows embedding a temperature sensing feature with very fast response into the gate-driving circuitry. In this work, a prototype of a gate driver circuit with temperature monitoring capability is presented and its applicability in a broad range of operating conditions is validated by means of a thorough experimental campaign.
Gate Driver for p-GaN HEMTs with Real-Time Monitoring Capability of Channel Temperature / Borghese, A.; Riccio, M.; Maresca, L.; Breglio, G.; Irace, A.. - 2021-:(2021), pp. 63-66. (Intervento presentato al convegno 33rd International Symposium on Power Semiconductor Devices and ICs, ISPSD 2021 tenutosi a jpn nel 2021) [10.23919/ISPSD50666.2021.9452317].
Gate Driver for p-GaN HEMTs with Real-Time Monitoring Capability of Channel Temperature
Borghese A.;Riccio M.;Maresca L.;Breglio G.;Irace A.
2021
Abstract
Normally-off p-GaN HEMTs with Schottky-type gate are becoming of common adoption in both industrial and consumer electronic market. The presence of a gate current with a remarkable dependence on the temperature of the device allows embedding a temperature sensing feature with very fast response into the gate-driving circuitry. In this work, a prototype of a gate driver circuit with temperature monitoring capability is presented and its applicability in a broad range of operating conditions is validated by means of a thorough experimental campaign.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
