Interfacial charge doping effect in C8-DNTT/PDIF-CN2 heterojunction field-effect transistors

In the last 15 years, DNTT-based compounds have emerged as a new generation of hole-transporting (p-type) organic semiconductors with superior charge transport properties. Even today, indeed, this class of derivatives is under intense scrutiny for the achievement of high-performance field-effect transistors to be applied in the development of advanced organic circuitry. Here, we analyze the growth of evaporated C8-DNTT films on HMDS-treated SiO2 surfaces, highlighting the dependence of the related morphological and electrical properties on the substrate temperature (Tsub) held during film condensation. In this way, we identified a Tsub range able to guarantee high mobility values (larger than 2.5 cm2 V−1 s−1) and morphological features being more compatible for the growth of additional layers on their top surfaces. This finding was the basic point to investigate the deposition of n-type PDIF-CN2 films on bottom C8-DNTT layers for the fabrication of heterojunction field-effect transistors. The electrical characterization of these devices, providing a shift of the threshold voltages and a minor sensitivity to the bias stress effect in comparison with the single-layer C8-DNTT counterparts, suggests the formation of a charge accumulation region at the organic/organic interface. This scenario was confirmed by additional electrical analyses performed on complementary double-layer structures.