The effects induced by radiation on an innovative photo-sensor consisting of Single-Photon Avalanche Diodes arrays, implemented in a 150-nm CMOS technology, are presented. Samples were irradiated with a proton beam at different doses, and the impact of radiation-induced damage on the performance of the devices in terms of Dark Count Rate has been estimated. Furthermore, possible methods to reduce the impact of radiation-induced damage are discussed.
Radiation induced degradation in a 150-nm CMOS SPADs device / Campajola, M.; Di Capua, F.; Gasparini, L.; Sarnelli, E.. - In: JOURNAL OF INSTRUMENTATION. - ISSN 1748-0221. - 15:8(2020). [10.1088/1748-0221/15/08/C08017]
Radiation induced degradation in a 150-nm CMOS SPADs device
Campajola M.
;Di Capua F.;
2020
Abstract
The effects induced by radiation on an innovative photo-sensor consisting of Single-Photon Avalanche Diodes arrays, implemented in a 150-nm CMOS technology, are presented. Samples were irradiated with a proton beam at different doses, and the impact of radiation-induced damage on the performance of the devices in terms of Dark Count Rate has been estimated. Furthermore, possible methods to reduce the impact of radiation-induced damage are discussed.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
