We developed novel techniques to fabricate atomically thin Bi 2.1 Sr 1.9 CaCu 2.0 O 8 + δ van der Waals heterostructures down to two unit cells while maintaining a transition temperature T c close to the bulk, and carry out magnetotransport measurements on these van der Waals devices. We find a double sign change of the Hall resistance R x y as in the bulk system, spanning both below and above T c . Further, we observe a drastic enlargement of the region of sign reversal in the temperature-magnetic field phase diagram with decreasing thickness of the device. We obtain quantitative agreement between experimental R x y ( T , B ) and the predictions of the vortex dynamics-based description of Hall effect in high-temperature superconductors both above and below Tc.
Sign-Reversing Hall Effect in Atomically Thin High-Temperature Bi2.1Sr1.9CaCu2.0O8+δ Superconductors / Frank Zhao, S. Y., Poccia, N., Margaret G., P., Cyndia, Y.u., Jedediah W., J., Hyobin, Y., Ruidan, Z., G. D., G.u., Kenji, W., Takashi, T., Svetlana V., P., Valerii M., V., and Philip, K.. - In: PHYSICAL REVIEW LETTERS. - ISSN 0031-9007. - (2019). [https://doi.org/10.1103/PhysRevLett.122.247001]
Sign-Reversing Hall Effect in Atomically Thin High-Temperature Bi2.1Sr1.9CaCu2.0O8+δ Superconductors
Poccia N;
2019
Abstract
We developed novel techniques to fabricate atomically thin Bi 2.1 Sr 1.9 CaCu 2.0 O 8 + δ van der Waals heterostructures down to two unit cells while maintaining a transition temperature T c close to the bulk, and carry out magnetotransport measurements on these van der Waals devices. We find a double sign change of the Hall resistance R x y as in the bulk system, spanning both below and above T c . Further, we observe a drastic enlargement of the region of sign reversal in the temperature-magnetic field phase diagram with decreasing thickness of the device. We obtain quantitative agreement between experimental R x y ( T , B ) and the predictions of the vortex dynamics-based description of Hall effect in high-temperature superconductors both above and below Tc.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
