statistiche ricercatore

Continente	#
AS - Asia	619
NA - Nord America	601
EU - Europa	376
SA - Sud America	69
AF - Africa	15
Continente sconosciuto - Info sul continente non disponibili	1
Totale	1.681

Nazione	#
US - Stati Uniti d'America	587
SG - Singapore	274
RU - Federazione Russa	243
VN - Vietnam	153
CN - Cina	92
BR - Brasile	55
HK - Hong Kong	44
IE - Irlanda	29
FR - Francia	20
FI - Finlandia	19
IN - India	16
DE - Germania	15
IT - Italia	13
NL - Olanda	12
GB - Regno Unito	9
IQ - Iraq	9
MX - Messico	9
BD - Bangladesh	6
JP - Giappone	6
AR - Argentina	5
SE - Svezia	5
ID - Indonesia	4
CO - Colombia	3
PH - Filippine	3
PL - Polonia	3
ZA - Sudafrica	3
CA - Canada	2
DZ - Algeria	2
EC - Ecuador	2
JM - Giamaica	2
KE - Kenya	2
KR - Corea	2
MA - Marocco	2
PS - Palestinian Territory	2
VE - Venezuela	2
AT - Austria	1
BG - Bulgaria	1
BH - Bahrain	1
CW - ???statistics.table.value.countryCode.CW???	1
DO - Repubblica Dominicana	1
EG - Egitto	1
ES - Italia	1
HR - Croazia	1
KW - Kuwait	1
KZ - Kazakistan	1
LT - Lituania	1
LV - Lettonia	1
MD - Moldavia	1
MR - Mauritania	1
MW - Malawi	1
NP - Nepal	1
PY - Paraguay	1
RS - Serbia	1
TH - Thailandia	1
TN - Tunisia	1
TR - Turchia	1
TW - Taiwan	1
UY - Uruguay	1
UZ - Uzbekistan	1
YT - Mayotte	1
ZM - Zambia	1
Totale	1.681

Nome	#
Experimental DC extraction of the base resistance of bipolar transistors: Application to SiGe:C HBTs	126
Scaling influence on the thermal behavior of toward-THz SiGe:C HBTs	117
Reliability of high-speed SiGe:C HBT under electrical stress close to the SOA limit	117
Accurate Mobility and Energy Relaxation Time Models for SiGe HBTs Numerical Simulation	116
Advanced thermal resistance simulation of SiGe HBTs including backend cooling effect	112
Avalanche multiplication and pinch-in models for simulating electrical instability effects in SiGe HBTs	109
Scaling influence on the thermal behavior of toward-THz SiGe:C HBTs	105
A microcontroller-based pulse generator for isothermal I-V measurements	103
Impact of scaling on the DC/RF thermal behavior of Terahertz SiGe HBTs	97
Influence of scaling and emitter layout on the thermal behavior of toward-THz SiGe:C HBTs	97
Analysis of the thermal behavior of AlGaN/GaN HEMTs	96
Analysis of the thermal behavior of AlGaN/GaN HEMTs	95
Impact of scaling on the DC/RF thermal behavior of SiGe HBTs for high-frequency applications	95
TCAD simulation and development within the European DOTFIVE project on 500GHz SiGe:C HBT's	92
Analytical Models of Effective Dos, Saturation Velocity and High-Field Mobility for SiGe HBTs Numerical Simulation	88
Influence of vertical scaling and temperature on impact-ionization effects in SiGe HBTs	85
Evaluation and modeling of voltage stress-induced hot carrier effects in high-speed SiGe HBTs	83
Totale	1.733

	Totale	Lug	Ago	Sett	Ott	Nov	Dic	Gen	Feb	Mar	Apr	Mag	Giu
2021/2022	80	0	0	0	1	0	2	0	3	28	0	7	39
2022/2023	162	17	4	0	28	29	24	0	16	25	11	4	4
2023/2024	109	3	16	3	21	14	35	1	0	0	1	13	2
2024/2025	440	19	4	0	0	24	15	44	30	25	23	215	41
2025/2026	809	80	51	86	58	192	31	84	34	119	62	12	0
Totale													1.733