In this paper, the effect of a non-linear dielectric gate stack on the short-circuit performance of a 1.2 kV SiC MOSFET was analyzed through TCAD simulations. Starting from the TCAD model of a commercial 1.2 kV, its standard gate oxide was replaced with a stack formed by oxide and a non-linear dielectric, characterized by a temperature dependent permittivity. This variation on temperature can be exploited to reduce the current conducted during short-circuit events, lowering the temperature reached through the device by about 30%, without affecting its static and dynamic performance.
Non-Linear Gate Stack Effect on the Short Circuit Performance of a 1.2-kV SiC MOSFET / Boccarossa, M.; Maresca, L.; Borghese, A.; Riccio, M.; Breglio, G.; Irace, A.; Salvatore, G. A.. - 360:(2024), pp. 59-65. [10.4028/p-50ZNaN]
Non-Linear Gate Stack Effect on the Short Circuit Performance of a 1.2-kV SiC MOSFET
Boccarossa M.
;Maresca L.;Borghese A.;Riccio M.;Breglio G.;Irace A.;Salvatore G. A.
2024
Abstract
In this paper, the effect of a non-linear dielectric gate stack on the short-circuit performance of a 1.2 kV SiC MOSFET was analyzed through TCAD simulations. Starting from the TCAD model of a commercial 1.2 kV, its standard gate oxide was replaced with a stack formed by oxide and a non-linear dielectric, characterized by a temperature dependent permittivity. This variation on temperature can be exploited to reduce the current conducted during short-circuit events, lowering the temperature reached through the device by about 30%, without affecting its static and dynamic performance.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
