A measurement system comprised of an ultra-low-distortion function generator, lock-in amplifier, and semiconductor parameter analyzer is used for sensitive extraction of the small signal thermal impedance network of bipolar devices and circuits. The extraction procedure is demonstrated through measurements on several silicon-on-glass NPN test structures. Behavioral modeling of the mutual thermal coupling obtained by fitting a multipole rational complex function to measured data is presented.
Extraction and modeling of self-heating and mutual thermal coupling impedance of bipolar transistors / Nebojsa, Nenadovic; Slobodan, Mijalkovic; Lis K., Nanver; Lode K. J., Vandamme; D'Alessandro, Vincenzo; Hugo, Schellevis; Jan W., Slotboom. - In: IEEE JOURNAL OF SOLID-STATE CIRCUITS. - ISSN 0018-9200. - STAMPA. - 39:10(2004), pp. 1764-1772. [10.1109/JSSC.2004.833766]
Extraction and modeling of self-heating and mutual thermal coupling impedance of bipolar transistors
d'ALESSANDRO, VINCENZO;
2004
Abstract
A measurement system comprised of an ultra-low-distortion function generator, lock-in amplifier, and semiconductor parameter analyzer is used for sensitive extraction of the small signal thermal impedance network of bipolar devices and circuits. The extraction procedure is demonstrated through measurements on several silicon-on-glass NPN test structures. Behavioral modeling of the mutual thermal coupling obtained by fitting a multipole rational complex function to measured data is presented.| File | Dimensione | Formato | |
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