The paper presents an analytic two-dimensional model for breakdown voltage of recently proposed superjunction structures. The two-dimensional model is able to correctly estimate electric eld and breakdown voltage giving an insight in superjunction devices behavior. Proposed closed form equations for superjunction dimensions and doping as a function of breakdown voltage are useful guidelines to optimal design. The two-dimensional model overcomes the limits of one-dimensional approxima- tions that are likely to overestimate breakdown voltage.
Power Superjunction Devices : an Analytic Model for Breakdown Voltage / Strollo, ANTONIO GIUSEPPE MARIA; Napoli, Ettore. - In: MICROELECTRONICS JOURNAL. - ISSN 0959-8324. - STAMPA. - 32:5-6(2001), pp. 491-496. [10.1016/S0026-2692(01)00020-9]
Power Superjunction Devices : an Analytic Model for Breakdown Voltage
STROLLO, ANTONIO GIUSEPPE MARIA;NAPOLI, ETTORE
2001
Abstract
The paper presents an analytic two-dimensional model for breakdown voltage of recently proposed superjunction structures. The two-dimensional model is able to correctly estimate electric eld and breakdown voltage giving an insight in superjunction devices behavior. Proposed closed form equations for superjunction dimensions and doping as a function of breakdown voltage are useful guidelines to optimal design. The two-dimensional model overcomes the limits of one-dimensional approxima- tions that are likely to overestimate breakdown voltage.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
