We report the results of second-harmonic optical spectroscopy of LaAlO3 films grown on SrTiO3 (001) substrates having either TiO2 or SrO atomic terminations. The atomic termination is found to have a large effect on the observed spectra, with a strong dependence on the ω-2ω light polarizations. These results are analyzed through a model based on symmetry-controlled selection rules and atomic orbital overlaps. The analysis shows that, as suspected from transport measurements, the SrO termination prevents the formation of a mobile interfacial electron gas. Yet, by explicitly probing and identifying the electronic states at the O2−–Ti3+ band gap we now obtain unique and direct evidence that this is caused by the absence of any detectable charge injection in the interfacial region rather than by carrier localization.

Influence of atomic termination on the LaAlO3/SrTiO3 interfacial polar rearrangement / Rubano, Andrea; T., Gunter; T., Fink; D., Paparo; Marrucci, Lorenzo; C., Cancellieri; S., Gariglio; J. M., Triscone; M., Fiebig. - In: PHYSICAL REVIEW. B, CONDENSED MATTER AND MATERIALS PHYSICS. - ISSN 1098-0121. - STAMPA. - 88:(2013), pp. 35405-1-35405-5. [10.1103/PhysRevB.88.035405]

Influence of atomic termination on the LaAlO3/SrTiO3 interfacial polar rearrangement

RUBANO, ANDREA;MARRUCCI, LORENZO;
2013

Abstract

We report the results of second-harmonic optical spectroscopy of LaAlO3 films grown on SrTiO3 (001) substrates having either TiO2 or SrO atomic terminations. The atomic termination is found to have a large effect on the observed spectra, with a strong dependence on the ω-2ω light polarizations. These results are analyzed through a model based on symmetry-controlled selection rules and atomic orbital overlaps. The analysis shows that, as suspected from transport measurements, the SrO termination prevents the formation of a mobile interfacial electron gas. Yet, by explicitly probing and identifying the electronic states at the O2−–Ti3+ band gap we now obtain unique and direct evidence that this is caused by the absence of any detectable charge injection in the interfacial region rather than by carrier localization.
2013
Influence of atomic termination on the LaAlO3/SrTiO3 interfacial polar rearrangement / Rubano, Andrea; T., Gunter; T., Fink; D., Paparo; Marrucci, Lorenzo; C., Cancellieri; S., Gariglio; J. M., Triscone; M., Fiebig. - In: PHYSICAL REVIEW. B, CONDENSED MATTER AND MATERIALS PHYSICS. - ISSN 1098-0121. - STAMPA. - 88:(2013), pp. 35405-1-35405-5. [10.1103/PhysRevB.88.035405]
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11588/558734
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