The behavior of silicon carbide (SiC) power MOSFETs under stressful short-circuit (SC) conditions is investigated in this paper. Two different SC failure phenomena for SiC power MOSFETs are thoroughly reported. Experimental evidence and TCAD electrothermal simulations are exploited to describe and discriminate the failure sources. Physical causes are finally investigated and explained by means of properly calibrated numerical investigations and are reported along with their effects on devices' SC capability. © 2016 IEEE.
A comprehensive study of short-circuit ruggedness of silicon carbide power MOSFETs / Romano, Gianpaolo; Fayyaz, A.; Riccio, Michele; Maresca, Luca; Breglio, Giovanni; Castellazzi, Alberto; Irace, Andrea. - In: IEEE JOURNAL OF EMERGING AND SELECTED TOPICS IN POWER ELECTRONICS. - ISSN 2168-6777. - 4:3(2016), pp. 978-987. [10.1109/JESTPE.2016.2563220]
A comprehensive study of short-circuit ruggedness of silicon carbide power MOSFETs
ROMANO, GIANPAOLO;RICCIO, MICHELE;MARESCA, LUCA;BREGLIO, GIOVANNI;CASTELLAZZI, ALBERTO;IRACE, ANDREA
2016
Abstract
The behavior of silicon carbide (SiC) power MOSFETs under stressful short-circuit (SC) conditions is investigated in this paper. Two different SC failure phenomena for SiC power MOSFETs are thoroughly reported. Experimental evidence and TCAD electrothermal simulations are exploited to describe and discriminate the failure sources. Physical causes are finally investigated and explained by means of properly calibrated numerical investigations and are reported along with their effects on devices' SC capability. © 2016 IEEE.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
