Structural and electronic properties of defective 2D transition metal dichalcogenide heterostructures

We present a first-principles study on the structure-property relationships in MoS2 and WS2 monolayers and their vertically stacked hetero-bilayer, with and without Sulfur vacancies, in order to dissect the electronic features behind their photocatalytic water splitting capabilities. We also benchmark the accuracy of three different exchange-correlation density functionals for both minimum-energy geometries and electronic structure. The best compromise between computational cost and qualitative accuracy is achieved with the HSE06 density functional on top of Perdew–Burke–Ernzerhof minima, including dispersion with Grimme's D3 scheme. This computational approach predicts the presence of mid-gap states for defective monolayers, in accordance with the present literature. For the heterojunction, we find unexpected vacancy-position dependent electronic features: the location of the defects leads either to mid-gap trap states, detrimental for photocatalyst or to a modification of characteristic type II band alignment behavior, responsible for interlayer charge separation and low recombination rates.