In this paper, an effective, yet simple, methodology for the temperature monitoring of voltage-driven p-GaN HEMTs based on gate leakage current sensing is presented. The proposed solution has been verified by SPICE electrothermal simulations and experiments on commercial devices within and out of safe operating area (SOA). Moreover, the monitoring circuit can be effectively adopted for commercially available normally-off p-GaN HEMTs with no need of modifying the recommended gate driver circuit.
Gate leakage current sensing for in situ temperature monitoring of p-GaN gate HEMTs / Borghese, A.; Riccio, M.; Longobardi, G.; Maresca, L.; Breglio, G.; Irace, A.. - In: MICROELECTRONICS RELIABILITY. - ISSN 0026-2714. - 114:(2020), p. 113762. [10.1016/j.microrel.2020.113762]
Gate leakage current sensing for in situ temperature monitoring of p-GaN gate HEMTs
Borghese A.;Riccio M.;Maresca L.;Breglio G.;Irace A.
2020
Abstract
In this paper, an effective, yet simple, methodology for the temperature monitoring of voltage-driven p-GaN HEMTs based on gate leakage current sensing is presented. The proposed solution has been verified by SPICE electrothermal simulations and experiments on commercial devices within and out of safe operating area (SOA). Moreover, the monitoring circuit can be effectively adopted for commercially available normally-off p-GaN HEMTs with no need of modifying the recommended gate driver circuit.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
