Characterizing the electron transport layer (ETL)/perovskite interface in perovskite solar cells (PSCs) is of paramount importance for their overall performance. In this article the effect of different concentrations of graphene nanoplatelets in addition to SnO2 is investigated by considering degradation over time. PSCs behavior is monitored by collecting dark current–voltage curves as fabricated and after two months. A deeper insight is gained through impedance spectroscopy analysis. From Nyquist plots equivalent circuit models and the corresponding time constants are extracted. Moreover, resistive part of the impedance associated with high frequency has been related to static shunt resistance, assessing one of the considered ETL doping concentration as the more suitable choice to reduce degradation.
Impedance Spectroscopy of Perovskite Solar Cells With SnO2 Embedding Graphene Nanoplatelets / Matacena, I.; Lancellotti, L.; Daliento, S.; Alfano, B.; De Maria, A.; La Ferrara, V.; Mercaldo, L. V.; Lucia Miglietta, M.; Polichetti, T.; Rametta, G.; Sannino, G. V.; Veneri, P. D.; Guerriero, P.. - In: IEEE JOURNAL OF PHOTOVOLTAICS. - ISSN 2156-3381. - (2023), pp. 1-7. [10.1109/JPHOTOV.2023.3301674]
Impedance Spectroscopy of Perovskite Solar Cells With SnO2 Embedding Graphene Nanoplatelets
Matacena I.
Primo
;Daliento S.;Sannino G. V.;Guerriero P.Ultimo
2023
Abstract
Characterizing the electron transport layer (ETL)/perovskite interface in perovskite solar cells (PSCs) is of paramount importance for their overall performance. In this article the effect of different concentrations of graphene nanoplatelets in addition to SnO2 is investigated by considering degradation over time. PSCs behavior is monitored by collecting dark current–voltage curves as fabricated and after two months. A deeper insight is gained through impedance spectroscopy analysis. From Nyquist plots equivalent circuit models and the corresponding time constants are extracted. Moreover, resistive part of the impedance associated with high frequency has been related to static shunt resistance, assessing one of the considered ETL doping concentration as the more suitable choice to reduce degradation.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.