IRIS
RUSSO, SALVATORE
 Distribuzione geografica
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Continente #
NA - Nord America 464
AS - Asia 205
EU - Europa 162
AF - Africa 1
Totale 832
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Nazione #
US - Stati Uniti d'America 448
SG - Singapore 69
CN - Cina 60
HK - Hong Kong 53
SE - Svezia 35
IE - Irlanda 33
FI - Finlandia 25
IT - Italia 25
IN - India 19
NL - Olanda 16
CA - Canada 14
DE - Germania 14
RU - Federazione Russa 7
GB - Regno Unito 4
UA - Ucraina 3
KR - Corea 2
MX - Messico 2
DZ - Algeria 1
JP - Giappone 1
TW - Taiwan 1
Totale 832
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Città #
Chandler 73
Hong Kong 53
Singapore 53
Santa Clara 47
Ashburn 44
Princeton 26
Millbury 24
Nanjing 23
Jacksonville 22
Pune 18
Boston 17
Amsterdam 14
Ottawa 14
Kunming 7
Beijing 6
Jiaxing 6
Nanchang 6
Wilmington 6
Des Moines 5
Sunnyvale 5
Falls Church 4
Norwalk 4
Boardman 3
Changsha 3
Hebei 3
Tianjin 3
Cambridge 2
Cologne 2
Gwangjin-gu 2
Kronberg 2
Mogliano Veneto 2
Naples 2
Napoli 2
Seattle 2
Bolzano 1
Dublin 1
Fairfield 1
Fidenza 1
Hanover 1
Hollywood 1
Houston 1
Kingston 1
Lanzhou 1
Latina 1
Los Angeles 1
Mexico City 1
Moscow 1
Orange 1
Redmond 1
Redwood City 1
Shenyang 1
Taipei 1
The Hague 1
Tijuana 1
Tokyo 1
Totale 526
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Nome #
Effective electrothermal analysis of electronic devices and systems with parameterized macromodeling 57
Thermal design of multifinger bipolar transistors 54
Thermal effects in thin silicon dies: simulation and modeling 52
Dynamic electrothermal analysis of bipolar devices and circuits relying on multi-port positive fraction Foster representation 48
Impact of layout and technology parameters on the thermal resistance of SiGe:C HBTs 43
Electrothermal behavior of highly-symmetric three-finger bipolar transistors 42
Thermal design of fully-isolated bipolar transistors 40
Impact of aluminum nitride heatspreaders on the thermal impedance of silicon-on-glass BJTs 35
Impact of scaling on the DC/RF thermal behavior of SiGe HBTs for high-frequency applications 35
Evaluating the self-heating thermal resistance of bipolar transistors by DC measurements: A critical review and update 34
Influence of layout design and on-wafer heatspreaders on the thermal behavior of fully-isolated bipolar transistors: Part I - Static analysis 34
Influence of layout design and on-wafer heatspreaders on the thermal behavior of fully-isolated bipolar transistors: Part II - Dynamic analysis 34
Dynamic electrothermal macromodeling: An application to signal integrity analysis in highly integrated electronic systems 34
Reliability 34
Analysis of the thermal behavior of AlGaN/GaN HEMTs 32
Thermal transient behavior of silicon-on-glass BJTs 31
Impact of scaling on the DC/RF thermal behavior of Terahertz SiGe HBTs 31
Time domain dynamic electrothermal macromodeling for thermally aware integrated system design 31
Influence of concurrent electrothermal and avalanche effects on the safe operating area of multifinger bipolar transistors 30
Development of an enhanced ADS electrothermal simulation tool for RF circuits 30
Thermal design of multifinger bipolar transistors 29
Numerical analysis of the dynamic thermal behavior of RF bipolar transistors 29
Electrothermal reduced equivalents of highly integrated electronic systems with multi-port positive fraction Foster expansion 28
Parameterized thermal macromodeling for fast and effective design of electronic components and systems 27
Valutazione della resistenza termica di transistori bipolari attraverso misure DC: revisione critica e nuovo approccio per BJT in silicio 24
Analysis of the thermal behavior of AlGaN/GaN HEMTs 20
Totale 918
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Categoria #
all - tutte 4.213
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 4.213
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2019/202029 0 0 0 0 0 0 0 0 0 3 11 15
2020/202177 0 3 9 0 3 15 3 29 8 3 3 1
2021/2022118 0 0 0 5 0 6 0 2 38 0 3 64
2022/2023179 26 0 2 18 25 27 0 20 35 16 8 2
2023/2024147 6 25 9 17 10 40 2 6 2 1 23 6
2024/2025194 41 50 1 0 26 18 58 0 0 0 0 0
Totale 918