In this work a groundbreaking SiC power MOSFET based on innovative vertical Gate All Around (GAA) concept is presented. Extensive TCAD simulations are performed to analyze the performance in forward as well as in reverse conditions for this new device concept. The proposed design has a target rating voltage of 1200V, suitable for e-mobility applications.
SiC GAA MOSFET Concept for High Power Electronics Performance Evaluation Through Advanced TCAD Simulations / Maresca, L.; Terracciano, V.; Borghese, A.; Boccarossa, M.; Riccio, M.; Breglio, G.; Mihaila, A.; Romano, G.; Wirths, S.; Knoll, L.; Irace, A.. - 360:(2024), pp. 75-80. [10.4028/p-lhRi4M]
SiC GAA MOSFET Concept for High Power Electronics Performance Evaluation Through Advanced TCAD Simulations
Maresca L.;Terracciano V.;Borghese A.;Boccarossa M.;Riccio M.;Breglio G.;Romano G.;Irace A.
2024
Abstract
In this work a groundbreaking SiC power MOSFET based on innovative vertical Gate All Around (GAA) concept is presented. Extensive TCAD simulations are performed to analyze the performance in forward as well as in reverse conditions for this new device concept. The proposed design has a target rating voltage of 1200V, suitable for e-mobility applications.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
