In this paper, we investigate the avalanche behavior of field-stop insulated gate bipolar transistors (IGBTs) by means of analytical and theoretical considerations, supported by ad hoc numerical simulations. A physical explanation of the presence of negative differential resistance branches in the avalanche I-V curve of the IGBT is presented and design criteria are derived to reduce and eventually eliminate this effect.
Physics of the Negative Resistance in the Avalanche I-V Curve of Field Stop IGBTs: Collector Design Rules for Improved Ruggedness / Spirito, Paolo; Breglio, Giovanni; Irace, Andrea; Maresca, Luca; Napoli, Ettore; Riccio, Michele. - In: IEEE TRANSACTIONS ON ELECTRON DEVICES. - ISSN 0018-9383. - 61:(2014), pp. 1457-1463. [10.1109/TED.2014.2311169]
Physics of the Negative Resistance in the Avalanche I-V Curve of Field Stop IGBTs: Collector Design Rules for Improved Ruggedness
SPIRITO, PAOLO;BREGLIO, GIOVANNI;IRACE, ANDREA;MARESCA, LUCA;NAPOLI, ETTORE;RICCIO, MICHELE
2014
Abstract
In this paper, we investigate the avalanche behavior of field-stop insulated gate bipolar transistors (IGBTs) by means of analytical and theoretical considerations, supported by ad hoc numerical simulations. A physical explanation of the presence of negative differential resistance branches in the avalanche I-V curve of the IGBT is presented and design criteria are derived to reduce and eventually eliminate this effect.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
