This paper provides an experimental investigation through infrared thermography of the steady-state temperature imbalance arising in parallel SiC MOSFETs. A switched-mode boost power converter based on two arrays of 4 parallel 1.2 kV MOSFETs is selected as a case-study. The analysis aims at proving that a proper device arrangement can minimize the thermal imbalance in the absence of circuit layout optimization. © 2024 The Author(s).
Analysis of Electrothermal Imbalance of Hard-Switched Parallel SiC MOSFETs through Infrared Thermography / Borghese, A., Angora, S., Boccarossa, M., Riccio, M., Maresca, L., Marrazzo, V.R., Breglio, G., Irace, A.. - 360:(2024), pp. 51-57. (20th International Conference on Silicon Carbide and Related Materials (ICSCRM 2023) ) [10.4028/p-2uwgqf].
Analysis of Electrothermal Imbalance of Hard-Switched Parallel SiC MOSFETs through Infrared Thermography
Borghese, Alessandro
Primo
;Boccarossa, Marco;Riccio, Michele;Maresca, Luca;Marrazzo, Vincenzo Romano;Breglio, Giovanni;Irace, AndreaUltimo
2024
Abstract
This paper provides an experimental investigation through infrared thermography of the steady-state temperature imbalance arising in parallel SiC MOSFETs. A switched-mode boost power converter based on two arrays of 4 parallel 1.2 kV MOSFETs is selected as a case-study. The analysis aims at proving that a proper device arrangement can minimize the thermal imbalance in the absence of circuit layout optimization. © 2024 The Author(s).I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
