ROMANO, GIANPAOLO
 Distribuzione geografica
Continente #
NA - Nord America 462
EU - Europa 285
AS - Asia 206
Totale 953
Nazione #
US - Stati Uniti d'America 454
IT - Italia 155
SG - Singapore 93
CN - Cina 64
NL - Olanda 48
HK - Hong Kong 44
FI - Finlandia 29
IE - Irlanda 24
DE - Germania 18
CA - Canada 8
GB - Regno Unito 5
FR - Francia 3
PL - Polonia 2
TW - Taiwan 2
IR - Iran 1
KR - Corea 1
RU - Federazione Russa 1
VN - Vietnam 1
Totale 953
Città #
Chandler 104
Singapore 74
Santa Clara 53
Amsterdam 48
Napoli 45
Hong Kong 44
Ashburn 24
Millbury 23
Princeton 23
Naples 22
Des Moines 18
Nanjing 18
Helsinki 16
Boston 15
Beijing 13
Hebei 9
Puglianello 9
Falkenstein 8
Ottawa 8
Seattle 7
Fairfield 6
Nanchang 5
Rome 5
Wilmington 5
Pago Veiano 4
Amalfi 3
Braunschweig 3
Milan 3
Nashua 3
Redwood City 3
Tianjin 3
Aversa 2
Jiaxing 2
Marigliano 2
Scafati 2
Shenyang 2
Suzhou 2
Zhengzhou 2
Bacoli 1
Casoria 1
Cava 1
Cogollo Del Cengio 1
Duncan 1
Ergolding 1
Gdynia 1
Guebwiller 1
Hangzhou 1
Hanoi 1
Houston 1
Indiana 1
Jinan 1
Kashan 1
Lawrence 1
Lodz 1
Neubiberg 1
Nottingham 1
Paliano 1
Peterborough 1
Potenza 1
Rende 1
Santa Maria Capua Vetere 1
Seoul 1
Shanghai 1
Shenzhen 1
Torino 1
Torre Annunziata 1
Webb City 1
Woodbridge 1
Totale 668
Nome #
Model-order reduction procedure for fast dynamic electrothermal simulation of power converters 80
Effect of heat sources modeling in DC circuit-level electrothermal simulation of power MOSFETs 54
Novel Cathode Design to Improve the ESD Capability of 600 V Fast Recovery Epitaxial Diodes 53
A comprehensive study of short-circuit ruggedness of silicon carbide power MOSFETs 51
Short-circuit failure mechanism of SiC power MOSFETs 47
A temperature-dependent SPICE model of SiC Power MOSFETs for within and out-of-SOA simulations 46
High-temperature validated SiC power MOSFET model for flexible robustness analysis of multi-chip structures 46
Investigation of pyroelectric fields generated by lithium niobate crystals through integrated microheaters 45
Analysis of device and circuit parameters variability in SiC MOSFETs-based multichip power module 43
A comprehensive study of current conduction during breakdown of Floating Field Ring terminations at arbitrary current levels 42
Physically based analytical model of the blocking I?V curve of Trench IGBTs 41
An ultrafast IR thermography system for transient temperature detection on electronic devices2014 Semiconductor Thermal Measurement and Management Symposium (SEMI-THERM) 41
Development of a new short-circuit tester for 1.7kV high current power devices 41
A robust and automated parameters calibration procedure for PSpice IGBT models 41
Physics of current limited failures during avalanche for 600V Fast Recovery Diodes 38
SiC power MOSFETs performance, robustness and technology maturity 36
Influence of gate bias on the avalanche ruggedness of SiC power MOSFETs 36
ELDO-COMSOL based 3D electro-thermal simulations of power semiconductor devices2014 Semiconductor Thermal Measurement and Management Symposium (SEMI-THERM) 35
A comprehensive study on the avalanche breakdown robustness of silicon carbide power MOSFETs 35
Pyro-electro-thermal analysis of LiNbO3 using microheaters 34
An area-effective termination technique for PT-Trench IGBTs 31
Influence of design parameters on the short-circuit ruggedness of SiC power MOSFETs 30
An effective parameters calibration technique for PSpice IGBT models application 26
Transient out-of-SOA robustness of SiC power MOSFETs 24
Infrared Thermography applied to power electron devices investigation 16
Totale 1.012
Categoria #
all - tutte 4.401
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 4.401


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2019/202025 0 0 0 0 0 0 0 0 3 5 17 0
2020/202120 0 0 1 3 2 9 1 0 0 0 1 3
2021/2022119 0 0 3 0 0 1 0 4 30 8 11 62
2022/2023246 25 26 11 6 28 30 6 13 29 50 15 7
2023/2024107 7 21 22 24 4 0 0 1 1 0 17 10
2024/2025234 42 44 1 4 31 62 50 0 0 0 0 0
Totale 1.012