IRIS
RINALDI, NICCOLO'
 Distribuzione geografica
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Continente #
AS - Asia 4.051
NA - Nord America 3.946
EU - Europa 3.516
SA - Sud America 625
AF - Africa 75
Continente sconosciuto - Info sul continente non disponibili 8
OC - Oceania 2
Totale 12.223
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Nazione #
US - Stati Uniti d'America 3.808
SG - Singapore 2.397
RU - Federazione Russa 1.768
CN - Cina 761
BR - Brasile 517
HK - Hong Kong 408
IT - Italia 309
UA - Ucraina 305
DE - Germania 279
VN - Vietnam 261
IE - Irlanda 223
FI - Finlandia 194
NL - Olanda 157
CA - Canada 79
SE - Svezia 79
GB - Regno Unito 78
IN - India 52
MX - Messico 43
AR - Argentina 42
FR - Francia 37
JP - Giappone 35
BD - Bangladesh 22
PL - Polonia 19
ZA - Sudafrica 18
TR - Turchia 16
VE - Venezuela 16
IQ - Iraq 15
EC - Ecuador 13
ES - Italia 13
ID - Indonesia 13
MA - Marocco 12
PE - Perù 12
CH - Svizzera 10
CZ - Repubblica Ceca 10
TW - Taiwan 9
UZ - Uzbekistan 8
CO - Colombia 7
PY - Paraguay 7
AT - Austria 6
EU - Europa 6
LT - Lituania 6
PK - Pakistan 6
UY - Uruguay 6
KE - Kenya 5
BE - Belgio 4
CY - Cipro 4
KR - Corea 4
KZ - Kazakistan 4
NP - Nepal 4
SA - Arabia Saudita 4
BO - Bolivia 3
CI - Costa d'Avorio 3
DO - Repubblica Dominicana 3
GE - Georgia 3
HR - Croazia 3
JM - Giamaica 3
LB - Libano 3
TN - Tunisia 3
TZ - Tanzania 3
AL - Albania 2
AO - Angola 2
AZ - Azerbaigian 2
BB - Barbados 2
CG - Congo 2
CL - Cile 2
CM - Camerun 2
DK - Danimarca 2
DZ - Algeria 2
GT - Guatemala 2
KG - Kirghizistan 2
KW - Kuwait 2
LV - Lettonia 2
ML - Mali 2
MZ - Mozambico 2
NG - Nigeria 2
PS - Palestinian Territory 2
RS - Serbia 2
SK - Slovacchia (Repubblica Slovacca) 2
ZM - Zambia 2
AE - Emirati Arabi Uniti 1
AF - Afghanistan, Repubblica islamica di 1
AU - Australia 1
BG - Bulgaria 1
BH - Bahrain 1
BJ - Benin 1
BN - Brunei Darussalam 1
BW - Botswana 1
BY - Bielorussia 1
CU - Cuba 1
CV - Capo Verde 1
CW - ???statistics.table.value.countryCode.CW??? 1
DJ - Gibuti 1
EG - Egitto 1
ET - Etiopia 1
GH - Ghana 1
GM - Gambi 1
HN - Honduras 1
HT - Haiti 1
IL - Israele 1
IR - Iran 1
Totale 12.199
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Città #
Singapore 1.033
Chandler 463
Moscow 449
Hong Kong 407
Ashburn 319
Jacksonville 274
Beijing 267
Santa Clara 241
Princeton 174
Millbury 169
Amsterdam 144
Boston 126
Woodbridge 121
Nanjing 115
Ho Chi Minh City 102
Los Angeles 96
Wilmington 78
Buffalo 69
Hanoi 60
Munich 58
The Dalles 56
Ottawa 54
Napoli 53
Des Moines 44
New York 43
São Paulo 43
Ann Arbor 42
Houston 40
Redondo Beach 39
San Jose 35
Hebei 34
Kronberg 29
Dallas 27
Nanchang 26
Shenyang 26
Norwalk 25
Tokyo 23
Jiaxing 22
Chicago 21
Naples 21
Rio de Janeiro 21
Mexico City 20
Pune 20
Seattle 20
Turku 20
Cagliari 18
Redwood City 18
Boardman 16
Frankfurt am Main 16
Tianjin 16
Belo Horizonte 15
Helsinki 15
Milan 15
Washington 15
Brooklyn 14
Changsha 14
London 14
Stockholm 14
Brasília 12
Chennai 12
Shanghai 12
Da Nang 11
Duncan 11
Falls Church 11
Hefei 11
Warsaw 11
Atlanta 10
Dublin 10
Fidenza 10
Haiphong 10
Johannesburg 10
Kunming 10
Orem 10
San Francisco 10
Leawood 9
Orange 9
Zurich 9
Campinas 8
Falkenstein 8
Guangzhou 8
Montreal 8
Rome 8
Sunnyvale 8
Toronto 8
Cologne 7
Dhaka 7
Lima 7
Mountain View 7
Ninh Bình 7
Nürnberg 7
Poplar 7
Porto Alegre 7
Bexley 6
Denver 6
Goiânia 6
Guayaquil 6
Montevideo 6
Ribeirão Preto 6
Tashkent 6
Avellino 5
Totale 6.126
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Nome #
Numerical analysis of the dynamic thermal behavior of RF bipolar transistors 183
SPICE modeling and dynamic electrothermal simulation of SiC power MOSFETs 135
A SCALABLE PHYSICAL MODEL FOR COPLANAR WAVEGUIDE TRANSITION IN FLIP-CHIP APPLICATIONS 133
FAst Novel Thermal Analysis Simulation Tool for Integrated Circuits (FANTASTIC) 125
Thermally induced current bifurcation in bipolar transistors 123
Studio del fenomeno dell'innesco di instabilita' termiche in MOSFET di potenza per basse tensioni: modellistica analitica e verifica sperimentale 122
Effect of heat sources modeling in DC circuit-level electrothermal simulation of power MOSFETs 121
Modellistica analitica e analisi numerica del comportamento termico di transistori bipolari con isolamento a trincea 120
Effective electrothermal analysis of electronic devices and systems with parameterized macromodeling 115
Si/SiGe:C and InP/GaAsSb heterojunction bipolar transistors for THz applications 115
Analisi degli effetti di auto-riscaldamento in transistori bipolari SOA 112
Model-order reduction procedure for fast dynamic electrothermal simulation of power converters 111
An experimental power-lines model for digital ASICs based on transmission-lines 110
Thermal feedback blocks for fast and reliable electrothermal circuit simulation of power circuits at module level 110
Simulation comparison of InGaP/GaAs HBT thermal performance in wire-bonding and flip-chip technologies 110
DESIGN AND CHARACTERIZATION OF A HIGH-RESISTIVITY SILICON TRAVELING WAVE AMPLIFIER FOR 10 GB/S OPTICAL COMMUNICATION SYSTEMS 109
ANALYTICAL SOLUTIONS OF THE DIFFUSIVE HEAT EQUATION AS THE APPLICATION FOR MULTI-CELLULAR DEVICE MODELING - A NUMERICAL ASPECT 108
Analysis of the UIS behavior of power devices by means of SPICE-based electrothermal simulations 107
Fast nonlinear dynamic compact thermal modeling with multiple heat sources in Ultra-Thin Chip Stacking Technology 107
Compact dynamic modeling for fast simulation of nonlinear heat conduction in ultra-thin chip stacking technology 106
Experimental DC extraction of the base resistance of bipolar transistors: Application to SiGe:C HBTs 106
Analytical modeling and numerical simulations of the thermal behavior of trench-isolated bipolar transistors on SOI substrates 104
Matrix reduction tool for creating boundary condition independent dynamic compact thermal models 104
Modellistica analitica e analisi numerica del comportamento termico di dispositivi trench SOI 103
Influence of layout and technology parameters on the thermal behavior of InGaP/GaAs HBTs 100
Connecting MOR-based boundary condition independent compact thermal models 100
A Two-Dimensional Analytical Model of Homojunction GaAs BMFET Structures 99
Thermal feedback networks for dynamic electrothermal simulations of devices and circuits: A critical perspective 98
Scaling influence on the thermal behavior of toward-THz SiGe:C HBTs 98
Accurate Mobility and Energy Relaxation Time Models for SiGe HBTs Numerical Simulation 97
Thermal effects in thin silicon dies: simulation and modeling 97
Small-signal operation of semiconductor devices including self-heating, with application to thermal characterization and instability analysis 96
Thermal mapping and 3D numerical simulation of new cellular power MOS affected by electro-thermal instability 96
Dynamic electrothermal analysis of bipolar devices and circuits relying on multi-port positive fraction Foster representation 96
Advanced thermal resistance simulation of SiGe HBTs including backend cooling effect 96
Modeling of minority-carrier transport in semiconductor regions with position-dependent material parameters at arbitrary injection levels 94
Electrothermal behavior of highly-symmetric three-finger bipolar transistors 94
Numerical analysis of the thermal behavior sensitivity to technology parameters and operating conditions in InGaP/GaAs HBTs 93
Avalanche multiplication and pinch-in models for simulating electrical instability effects in SiGe HBTs 92
Reliability of high-speed SiGe:C HBT under electrical stress close to the SOA limit 92
Thermal design of fully-isolated bipolar transistors 91
SILICON AS SMART PACKAGE FOR PHOTONIC ICS 90
Modeling of minority-carrier transport in nonuniformly doped silicon regions with asymptotic expansions 90
Structure preserving approach to parametric dynamic compact thermal models of nonlinear heat conduction 90
Advanced thermal simulation of SiGe:C HBTs including back-end-of-line 89
Analytical model for thermal instability of low voltage power MOS and S.O.A. in pulse operation 87
Impact of layout and technology parameters on the thermal resistance of SiGe:C HBTs 87
Dynamic electrothermal macromodeling: An application to signal integrity analysis in highly integrated electronic systems 87
Theory of electrothermal behavior of bipolar transistors: Part II - Two-finger devices 86
Calibration of detailed thermal models by parametric dynamic compact thermal models 86
Reliability 86
Thermal analysis of solid-state devices and circuits: an analytical approach 85
The EU DOTSEVEN project: Overview and results 85
Finite element modeling for thermal resistance extraction in silicon-on-glass bipolar transistors 85
Multi-port dynamic compact thermal models of nonlinear heat conduction 85
Dynamic Electrothermal macromodeling techniques for thermal-aware design of circuits and systems 85
Parametric compact thermal models by moment matching for variable geometry 84
Analysis of the influence of layout and technology parameters on the thermal impedance of GaAs HBT/BiFET using a highly-efficient tool 84
Delphi-like dynamical compact thermal models using model order reduction 84
On the modeling of the transient thermal behavior of semiconductor devices 83
A microcontroller-based pulse generator for isothermal I-V measurements 83
Scaling influence on the thermal behavior of toward-THz SiGe:C HBTs 83
Influence of scaling and emitter layout on the thermal behavior of toward-THz SiGe:C HBTs 83
Novel MOR approach for extracting dynamic compact thermal models with massive numbers of heat sources 82
Advances in electrothermal simulation of solid-state devices and circuits using commercial CAD tools 81
Generalized image method with application to the thermal modeling of power devices and circuits 81
Evaluating the self-heating thermal resistance of bipolar transistors by DC measurements: A critical review and update 81
Parameterized thermal macromodeling for fast and effective design of electronic components and systems 81
Novel partition-based approach to dynamic compact thermal modeling 81
A new SPICE model of VDMOS transistors including thermal and quasi-saturation effects 80
TCAD simulation and development within the European DOTFIVE project on 500GHz SiGe:C HBT's 79
Restabilizing mechanisms after the onset of thermal instability in bipolar transistors 78
Impact of scaling on the DC/RF thermal behavior of SiGe HBTs for high-frequency applications 78
A new electro-thermal simulation tool for the analysis of bipolar devices and circuits 77
Theory of electrothermal behavior of bipolar transistors: Part III - Impact-ionization 77
Theory of electrothermal behavior of bipolar transistors: Part I - Single-finger devices 77
Impact of aluminum nitride heatspreaders on the thermal impedance of silicon-on-glass BJTs 77
Analytical Models of Effective Dos, Saturation Velocity and High-Field Mobility for SiGe HBTs Numerical Simulation 77
Analysis of the thermal behavior of AlGaN/GaN HEMTs 77
Electrothermal reduced equivalents of highly integrated electronic systems with multi-port positive fraction Foster expansion 77
Influence of vertical scaling and temperature on impact-ionization effects in SiGe HBTs 76
Thermal transient behavior of silicon-on-glass BJTs 75
Analysis of the thermal behavior of AlGaN/GaN HEMTs 75
Enhancing commercial CAD tools toward the electrothermal simulation of power transistors 74
Analysis of electrothermal effects in bipolar current mirrors 74
Analytical modeling and numerical simulations of the thermal behavior of trench-isolated bipolar transistors 74
An Improved Write Driver for Miniaturized Hard Disk Drives 73
Impact of scaling on the DC/RF thermal behavior of Terahertz SiGe HBTs 72
Modeling of small-signal minority-carrier transport in bipolar at arbitrary injection levels 71
Influence of concurrent electrothermal and avalanche effects on the safe operating area of multifinger bipolar transistors 71
Theoretical analysis and modeling of bipolar transistor operation under reversal base current conditions 71
Thermal mapping of new cellular power MOS affected by electro-thermal instability 71
Evaluation and modeling of voltage stress-induced hot carrier effects in high-speed SiGe HBTs 71
Multi-port dynamic compact thermal models of dual-chip package using model order reduction and metaheuristic optimization 71
Analytical modeling and numerical simulations of the thermal behavior of bipolar transistors 70
Time domain dynamic electrothermal macromodeling for thermally aware integrated system design 70
A back-wafer contacted silicon-on-glass integrated bipolar process - Part II: A novel analysis of thermal breakdown 69
Modeling of thermal resistance dependence on design parameters in silicon-on-glass bipolar transistors 68
Analysis of the depletion layer of exponentially graded pn junctions with nonuniformly doped substrates 67
Two dimensional analysis of a test structure for lifetime profile measurements 67
Totale 9.086
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Categoria #
all - tutte 44.112
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 44.112
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/2021262 0 0 0 0 0 0 68 32 81 14 55 12
2021/2022927 17 3 3 14 5 29 19 40 231 39 116 411
2022/20231.058 190 74 14 110 134 118 3 90 137 137 38 13
2023/2024700 26 115 49 67 48 95 5 88 7 14 134 52
2024/20253.816 251 233 23 19 177 97 464 234 253 269 1.421 375
2025/20263.843 721 467 617 528 1.184 270 56 0 0 0 0 0
Totale 12.692