IRIS
SPIRITO, PAOLO
 Distribuzione geografica
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Continente #
NA - Nord America 1.731
EU - Europa 963
AS - Asia 357
AF - Africa 20
Continente sconosciuto - Info sul continente non disponibili 1
Totale 3.072
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Nazione #
US - Stati Uniti d'America 1.710
UA - Ucraina 293
SG - Singapore 208
IT - Italia 197
CN - Cina 136
DE - Germania 122
FI - Finlandia 78
NL - Olanda 75
SE - Svezia 73
IE - Irlanda 64
GB - Regno Unito 30
CA - Canada 21
CI - Costa d'Avorio 20
FR - Francia 12
IN - India 8
AT - Austria 5
RU - Federazione Russa 5
CH - Svizzera 4
CZ - Repubblica Ceca 1
EU - Europa 1
HK - Hong Kong 1
HR - Croazia 1
JP - Giappone 1
KR - Corea 1
MD - Moldavia 1
RO - Romania 1
SI - Slovenia 1
TR - Turchia 1
TW - Taiwan 1
Totale 3.072
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Città #
Chandler 365
Jacksonville 279
Singapore 169
Santa Clara 76
Amsterdam 73
Ashburn 73
Millbury 73
Princeton 73
Woodbridge 57
Boston 49
Wilmington 49
Naples 39
Nanjing 37
Kronberg 35
Ann Arbor 31
Boardman 27
Houston 26
Beijing 25
Napoli 22
Ottawa 20
Norwalk 18
Nanchang 14
Changsha 9
Des Moines 8
Hebei 8
Pune 8
Shenyang 8
Jiaxing 7
Orange 7
Seattle 7
Shanghai 7
Cagliari 6
Nuremberg 6
Washington 6
Dallas 5
Fremont 5
Chicago 4
Dearborn 4
Duncan 4
Kunming 4
Lawrence 4
Marseille 4
Milan 4
Paris 4
Puglianello 4
Scafati 4
Caserta 3
Castelnuovo Rangone 3
Dublin 3
Falls Church 3
Guangzhou 3
Guildford 3
Redwood City 3
San Nicola la Strada 3
Yellow Springs 3
Angri 2
Aversa 2
Baden 2
Bari 2
Cesena 2
Cornate d'Adda 2
Indiana 2
Los Angeles 2
Redmond 2
Rende 2
San Vitaliano 2
Shenzhen 2
Tianjin 2
Vico Equense 2
Villach 2
Walnut 2
Augusta 1
Castiglione Delle Stiviere 1
Chisinau 1
Clifton 1
Cork 1
Edinburgh 1
Fiumicino 1
Forlì 1
Helsinki 1
Hong Kong 1
Indian Trail 1
Isola Della Scala 1
Istanbul 1
Landsberg am Lech 1
Leawood 1
Lentini 1
Long Beach 1
Marano Di Napoli 1
Marcianise 1
Mercato San Severino 1
Mountain View 1
Nova Milanese 1
Nürnberg 1
Palermo 1
Philadelphia 1
Pisa 1
Rome 1
San Cipriano Picentino 1
San Giuliano 1
Totale 1.855
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Nome #
Characterization of recombination centers in Si epilayers after He implantation by direct measurement of local lifetime distribution with the ac profiling technique 75
AN ELECTRICAL TECHNIQUE FOR THE MEASUREMENT OF THE INTERFACE RECOMBINATION VELOCITY BASED ON A THREE-TERMINAL TEST STRUCTURE 69
ON THE SAFE OPERATING AREA OF POWER SCHOTTKY DIODES IN AVALANCHE CONDITIONS 66
A METHOD FOR IN-SITU CHARACTERIZATION OF SEMICONDUCTOR INTERFACE DURING A-SI SOLAR CELL FABRICATION 65
Electrothermal issues in 4H-SiC 600 V Schottky diodes in forward mode: Experimental characterization, numerical simulations and analytical modeling 61
1300 V, 2 ms pulse inductive load switching test circuit with 20 ns selectable crowbar intervention 61
A NEW TEST STRUCTURE FOR IN-SITU MEASUREMENTS OF INTERFACE RECOMBINATION DURING SURFACE TREATMENTS 60
AN ELECTRICAL TECHNIQUE FOR THE MEASUREMENT OF THE SURFACE RECOMBINATION VELOCITY 59
Lifetime and resistivity modifications induced by helium implantation in silicon: experimental analysis with the ac profiling technique 58
Semiconducto Device with Buffer Layer 56
A new test structure for lifetime profiling in very thick lightly doped silicon material 55
Design criteria for PiN diode using multiple He ion implantation for local lifetime control 54
Studio del fenomeno dell'innesco di instabilita' termiche in MOSFET di potenza per basse tensioni: modellistica analitica e verifica sperimentale 53
Effect of the Collector Design on the IGBT Avalanche Ruggedness: A Comparative Analysis between Punch-Through and Field-Stop Devices 53
Analytical model for thermal instability of low voltage power MOS and S.O.A. in pulse operation 52
A VLSI architecture for real time processing of one-bit coded SAR signals 52
Achieving accuracy in modeling the temperature coefficient of threshold voltage in MOS transistors with uniform and horizontally nonuniform channel doping 52
Characterization of a Point-Wise Close Electric Field Sampling System exploiting the Electro-Optic Effect 51
An equivalent time temperature mapping system with a 320x256 pixel full frame 100kHz sampling rate 51
Analysis of local lifetime control and emitter efficiency control for the design of power PiN diodes 50
Analysis of large area Trench-IGBT current distribution under UIS test with the aid of lock-in thermography 50
All electrical resistivity profiling technique for ion implanted semiconductor materials 49
Fast power rectifier design using local lifetime and emitter efficiency control techniques 48
Thermal Mapping of Power Devices with a Completely Automated Thermoreflectance Measurement System 47
A novel time-domain processor for real time SAR operation 47
Reliability enhancement with the aid of transient infrared thermal analysis of smart Power MOSFETs during short circuit operation 47
An experimental power-lines model for digital ASICs based on transmission-lines 46
Physics of the Negative Resistance in the Avalanche I-V Curve of Field Stop IGBTs: Collector Design Rules for Improved Ruggedness 46
A new electro-thermal simulation tool for the analysis of bipolar devices and circuits 45
Experimental measurements of recombination lifetime in proton irradiated power devices 45
Study of a failure mechanism during UIS switching of planar PT-IGBT with current sense cell 45
An experimental analysis of localized lifetime and resistivity control by helium implant in Si 44
Modeling the onset of thermal instability in low voltage power MOS: An experimental validation 43
A novel test structure for the measurement of the multiplication coefficient in silicon 43
New developments of THERMOS3, a tool for 3D electroTHERmal simulation of smart power MOSfets 43
Experimental measurement of in-depth secondary defect distribution prodced by Helium implantation in silicon 43
Enhancing commercial CAD tools toward the electrothermal simulation of power transistors 42
Helium implantation in silicon: detailed experimental analysis of resistivity and lifetime profiles as a function of the implantation dose and energy 42
A novel UIS test system with Crowbar feedback for reduced failure energy in power devices testing 42
TherMos3: a 3D electrothermal simulator for smart Power Devices 41
Cell pitch influence on the current distribution during avalanche operation of trench IGBTs: Design issues to increase UIS ruggedness2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's (ISPSD) 41
Development of an Electro-Optic step-by-step Sampling System for ICs Close Electro-Magnetic Field Measurement 40
PiN diode optimal design using local lifetime control 40
Thermal transient mapping systems for integrated semiconductor devices and circuits 38
Fast Infrared thermal analysis of Smart Power MOSFETS in permanent short circuit operation 38
Design of IGBT with Integral Freewheeling Diode 38
He voids lifetime control compared with buffer-layer engineering for a 600V punch-through IGBT 37
THERMOS3, a tool for 3D electrothermal simulation of smart power MOSFETs 36
Numerical Analysis of Local Lifetime control for High-speed low-loss PiN diode design 36
Effect of a buffer layer in the epi-substrate region to boost the avalanche capability of a 100V Schottky diode 35
A Dynamic Temperature Mapping System with a 320x256 Pixels Frame Size and 100kHz Sampling Rate 35
Thermal instabilities in high current power MOS devices: Experimental evidence, electro-thermal simulations and analytical modeling 34
Influence of layout geometries on the behavior of 4H-SiC 600V merged PiN Schottky (MPS) rectifiers 33
Experimental Detection and Numerical Validation of Different Failure Mechanisms in IGBTs During Unclamped Inductive Switching 33
Electrothermal issues in 4H-SiC 600 V Schottky diodes in forward mode: Experimental characterization, numerical simulation and analytical modeling 32
Modeling and design of power PiN rectifier 32
Thermal simulation and ultrafast IR temperature mapping of a Smart Power Switch for automotive applications 32
Thermal instability in power BJT: a radiometric detection of transient temperature maps and electro-thermal simulation 31
Electrical measurement of the lattice damage induced by a-particle implantation in silicon 31
Power semiconductor devices - continuous development 30
Compact Electro-thermal Modeling and Simulation of Large Area Multicellular Trench-IGBT 30
null 29
The bipolar mode field effect transistor (BMFET) as an optically controlled switch: numerical and experimental results 29
Improved electro-thermal simulation of power devices 29
Detection of localized UIS failure on IGBTs with the aid of lock-in thermography 29
Efficient thermal models of multicellular devices 27
Design of a 600V Punch-through IGBT using local lifetime control. On-state voltage drop vs. turn-off time optimization. 27
Two-Dimensional Modeling of On State Voltage Drop in IGBT 27
AN ELECTRICAL TECHNIQUE FOR THE MEASUREMENT OF THE INTERFACE RECOMBINATION VELOCITY BASED ON A THREE TERMINAL TEST STRUCTURE 27
Thermal modelling and simulation of multicellular power devices 26
Single Chip Implementation of 600V IGBT and Freewheeling Diode 26
Educational issues for power semiconductor devices (invited paper) 25
Electro-thermal instability in multi-cellular Trench-IGBTs in avalanche condition: experiments and simulations 25
Experimental characterization of temperature distribution on Power MOS devices during Unclamped Inductive Switching 24
Voltage drops, sawtooth oscillations and HF bursts in Breakdown Current and Voltage waveforms during UIS experiments 21
THERMOS3, A TOOL FOR 3D ELECTROTHERMAL SIMULATION OF SMART POWER MOSFETS 20
Experimental study on power consumption in lifetime engineered power diodes 17
Infrared Thermography applied to power electron devices investigation 13
Energy and current crowding limits in avalanche operation of IGBTs 11
Totale 3.215
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Categoria #
all - tutte 13.171
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 13.171
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2019/2020186 0 0 0 0 73 3 2 0 1 5 38 64
2020/2021541 11 62 50 68 64 72 65 3 76 12 55 3
2021/2022480 13 4 2 7 9 15 6 12 63 62 112 175
2022/2023698 98 86 29 98 66 75 3 52 84 71 22 14
2023/2024415 13 56 58 19 18 48 10 93 6 7 55 32
2024/2025321 115 107 6 9 84 0 0 0 0 0 0 0
Totale 3.215