IRIS
MARESCA, LUCA
 Distribuzione geografica
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Continente #
AS - Asia 4.371
NA - Nord America 3.045
EU - Europa 2.757
SA - Sud America 492
AF - Africa 73
Continente sconosciuto - Info sul continente non disponibili 6
OC - Oceania 6
Totale 10.750
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Nazione #
US - Stati Uniti d'America 2.871
SG - Singapore 1.878
RU - Federazione Russa 1.177
CN - Cina 1.002
IT - Italia 811
VN - Vietnam 698
BR - Brasile 401
HK - Hong Kong 257
DE - Germania 140
NL - Olanda 140
FR - Francia 136
JP - Giappone 112
CA - Canada 99
BD - Bangladesh 97
KR - Corea 94
FI - Finlandia 82
GB - Regno Unito 76
IN - India 58
IE - Irlanda 40
MX - Messico 40
AR - Argentina 38
PL - Polonia 38
ES - Italia 26
ZA - Sudafrica 24
IQ - Iraq 23
TW - Taiwan 20
ID - Indonesia 18
PK - Pakistan 18
EC - Ecuador 17
AT - Austria 16
TR - Turchia 15
UA - Ucraina 15
PH - Filippine 14
SE - Svezia 12
VE - Venezuela 10
SA - Arabia Saudita 8
CH - Svizzera 7
CL - Cile 7
JM - Giamaica 7
JO - Giordania 7
PY - Paraguay 7
TH - Thailandia 7
AE - Emirati Arabi Uniti 6
DZ - Algeria 6
UZ - Uzbekistan 6
CI - Costa d'Avorio 5
KE - Kenya 5
MA - Marocco 5
MD - Moldavia 5
NI - Nicaragua 5
TN - Tunisia 5
AL - Albania 4
BE - Belgio 4
DK - Danimarca 4
EG - Egitto 4
OM - Oman 4
PA - Panama 4
PE - Perù 4
RS - Serbia 4
SV - El Salvador 4
BY - Bielorussia 3
CO - Colombia 3
CW - ???statistics.table.value.countryCode.CW??? 3
CY - Cipro 3
GA - Gabon 3
HN - Honduras 3
IR - Iran 3
LT - Lituania 3
MY - Malesia 3
NG - Nigeria 3
NZ - Nuova Zelanda 3
SY - Repubblica araba siriana 3
TT - Trinidad e Tobago 3
UY - Uruguay 3
AO - Angola 2
AZ - Azerbaigian 2
BG - Bulgaria 2
BH - Bahrain 2
BO - Bolivia 2
CG - Congo 2
CR - Costa Rica 2
ET - Etiopia 2
GE - Georgia 2
HU - Ungheria 2
IL - Israele 2
KZ - Kazakistan 2
LU - Lussemburgo 2
NP - Nepal 2
PR - Porto Rico 2
SK - Slovacchia (Repubblica Slovacca) 2
SN - Senegal 2
XK - ???statistics.table.value.countryCode.XK??? 2
AG - Antigua e Barbuda 1
AM - Armenia 1
AU - Australia 1
BN - Brunei Darussalam 1
BZ - Belize 1
CD - Congo 1
CZ - Repubblica Ceca 1
DM - Dominica 1
Totale 10.733
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Città #
Singapore 960
San Jose 422
Hefei 353
Ashburn 333
Moscow 264
Hong Kong 239
Beijing 238
Naples 235
Ho Chi Minh City 219
Chandler 185
Santa Clara 168
Hanoi 154
Los Angeles 131
Amsterdam 120
Tokyo 103
Lauterbourg 78
The Dalles 76
Napoli 74
Seoul 73
New York 70
Millbury 53
Fairfield 51
Munich 50
Buffalo 47
São Paulo 47
Boston 45
Des Moines 43
Dallas 40
Rome 36
Princeton 34
Montreal 33
Redondo Beach 33
Helsinki 32
Nuremberg 30
Orem 30
Milan 29
Da Nang 28
Denver 26
Houston 26
Haiphong 25
Mexico City 23
Lawrence 22
Nanjing 22
Ottawa 22
Seattle 22
Brooklyn 21
Warsaw 21
Atlanta 20
Chennai 20
Phoenix 20
Chicago 19
Turku 18
Frankfurt am Main 17
Falkenstein 15
Johannesburg 15
London 15
Poplar 15
Biên Hòa 14
Council Bluffs 14
Wilmington 14
Puglianello 13
Rio de Janeiro 13
Shanghai 13
Toronto 13
Hebei 12
Hải Dương 12
Bologna 11
Marigliano 11
Mumbai 11
San Francisco 11
Duncan 10
Nha Trang 10
Baghdad 9
Belo Horizonte 9
Castelfranci 9
Giugliano in Campania 9
Salerno 9
Stockholm 9
Can Tho 8
Guarulhos 8
Manchester 8
Nanchang 8
Ninh Bình 8
Rende 8
Thái Nguyên 8
Amman 7
Jiaxing 7
Kingston 7
Turin 7
Ankara 6
Cincinnati 6
Curitiba 6
Dublin 6
Guayaquil 6
Jakarta 6
Shenyang 6
Tampa 6
Tashkent 6
Trieste 6
Tây Ninh 6
Totale 5.946
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Nome #
200 V Fast Recovery Epitaxial Diode with superior ESD capability 215
Optimum module design II: Impact of parameter design spread 197
Transmission line pulse system for avalanche characterization of high power semiconductor devicesVLSI Circuits and Systems VI 162
A comprehensive study of short-circuit ruggedness of silicon carbide power MOSFETs 158
Innovative Photonic Sensors for Safety and Security, Part III: Environment, Agriculture and Soil Monitoring 155
Development and optimization of an energy harvesting circuit for multiple piezoelectric elements integrated into a smart air spring 154
Electrothermal aware design of multichip SiC-based converters for e-mobility 151
Innovative Photonic Sensors for Safety and Security, Part II: Aerospace and Submarine Applications 150
Innovative Photonic Sensors for Safety and Security, Part I: Fundamentals, Infrastructural and Ground Transportations 149
Impact of gate drive voltage on avalanche robustness of trench IGBTs 149
3D electro-thermal simulations of wide area power devices operating in avalanche condition 147
Edge-AI on Wearable Devices: Myocardial Infarction Detection with Spectrogram and 1D-CNN 146
Real-Time Myocardial Infarction Detection Approaches with a Microcontroller-Based Edge-AI Device 145
Effect of the Collector Design on the IGBT Avalanche Ruggedness: A Comparative Analysis between Punch-Through and Field-Stop Devices 143
Simulation of an Optical-to-Digital Converter for High Frequency FBG Interrogator 143
Effect of Parameters Variability on the Performance of SiC MOSFET Modules 140
Physically based analytical model of the blocking I?V curve of Trench IGBTs 138
Analysis of device and circuit parameters variability in SiC MOSFETs-based multichip power module 138
An ultrafast IR thermography system for transient temperature detection on electronic devices2014 Semiconductor Thermal Measurement and Management Symposium (SEMI-THERM) 137
Physics of the Negative Resistance in the Avalanche I-V Curve of Field Stop IGBTs: Collector Design Rules for Improved Ruggedness 135
Floating field ring technique applied to enhance fill factor of silicon photomultiplier elementary cell 134
Novel Cathode Design to Improve the ESD Capability of 600 V Fast Recovery Epitaxial Diodes 134
An area-effective termination technique for PT-Trench IGBTs 133
Development of a new short-circuit tester for 1.7kV high current power devices 133
TCAD Analysis of the Impact of the Metal-Semiconductor Junction Properties on the Forward Characteristics of MPS/JBS SiC Diodes 132
A Scalable SPICE-Based Compact Model for 1.7 kV SiC MOSFETs 131
Experimental Analysis of C-V and I-V Curves Hysteresis in SiC MOSFETs 131
TCAD model calibration for the SiC/SiO2interface trap distribution of a planar SiC MOSFET 131
A novel low-cost timing system for alpine ski races based on low power microcontrollers and peer-To-peer wireless data transfer 130
Cell pitch influence on the current distribution during avalanche operation of trench IGBTs: Design issues to increase UIS ruggedness2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's (ISPSD) 130
Short-circuit failure mechanism of SiC power MOSFETs 130
An electro-thermal SPICE model for Reverse Conducting IGBT: Simulation and experimental validation 130
Model-order reduction procedure for fast dynamic electrothermal simulation of power converters 129
Automatic TCAD model calibration for multi-cellular Trench-IGBTs 128
Accurate SPICE modeling of Reverse Conducting IGBTs including self-heating effect 128
A robust and automated parameters calibration procedure for PSpice IGBT models 126
Gate Driver for p-GaN HEMTs with Real-Time Monitoring Capability of Channel Temperature 125
Statistical Analysis of the Electrothermal Imbalances of Mismatched Parallel SiC Power MOSFETs 125
On the avalanche ruggedness of optimized termination structure for 600 v punch-through IGBTs 124
Gate leakage current sensing for in situ temperature monitoring of p-GaN gate HEMTs 122
SiC/SiO2interface traps effect on SiC MOSFETs Gate capacitance with biased Drain 122
A robust electro-thermal IGBT SPICE model: Application to short-circuit protection circuit design 122
ELDO-COMSOL based 3D electro-thermal simulations of power semiconductor devices2014 Semiconductor Thermal Measurement and Management Symposium (SEMI-THERM) 121
A comprehensive study of current conduction during breakdown of Floating Field Ring terminations at arbitrary current levels 120
SiC MOSFET C-V Curves Analysis with Floating Drain Configuration 119
An Experimentally Verified 3.3 kV SiC MOSFET Model Suitable for High-Current Modules Design 117
An efficient simulation methodology to quantify the impact of parameter fluctuations on the electrothermal behavior of multichip SiC power modules 116
Fully-Coupled Electrothermal Simulation of Wide-Area Reverse Conducting IGBTs 116
Gate current in p-gan gate hemts as a channel temperature sensitive parameter: A comparative study between schottky-and ohmic-gate gan hemts 115
Atrial Fibrillation Detection by Means of Edge Computing on Wearable Device: A Feasibility Assessment 114
SiC MOSFETs 114
Infrared Thermography applied to power electron devices investigation 113
High-temperature validated SiC power MOSFET model for flexible robustness analysis of multi-chip structures 112
Wide Range AWG-Based FBG Interrogation System With Improved Sensitivity 112
SiC MOSFETs capacitance study 110
Source modulation technique applied to enhance the Short-Circuit robustness of a PT-IGBT 110
Physics of current limited failures during avalanche for 600V Fast Recovery Diodes 110
An Electrothermal Compact Model for SiC MOSFETs Based on SPICE Primitives with Improved Description of the JFET Resistance 108
Influence of design parameters on the short-circuit ruggedness of SiC power MOSFETs 108
Experimental Study on the Short-Circuit Instability of Cascode GaN HEMTs 106
The Ferro-Power MOSFET: Enhancing Short-Circuit Robustness in Power Switches With a Ferroelectric Gate Stack 105
Analysis of the Drever-Pound-Hall technique for the simultaneous detection of the detuning of more cavities on a single channel 101
SiC MOSFET C-V Characteristics with Positive Biased Drain 98
Experimental analysis of electro-thermal interaction in normally-off pGaN HEMT devices 97
A temperature-dependent SPICE model of SiC Power MOSFETs for within and out-of-SOA simulations 96
Investigation on the Self-Sustained Oscillation of Superjunction MOSFET Intrinsic Diode 96
TCAD-based investigation of a 3.3 kV planar SiC MOSFET: BV-RON trade-off optimization 95
Non-Linear Gate Stack Effect on the Short Circuit Performance of a 1.2-kV SiC MOSFET 93
Analysis of Electrothermal Imbalance of Hard-Switched Parallel SiC MOSFETs through Infrared Thermography 92
Threshold Voltage Temperature Dependence for a 1.2 kV SiC MOSFET with Non-Linear Gate Stack 91
Analysis on the Self-Sustained Oscillation of SiC MOSFET Body Diode 91
Influence of the SiC/SiO2 SiC MOSFET interface traps distribution on C-V measurements evaluated by TCAD simulations 90
Out-of-SOA performance in 3.3 kV SiC MOSFETs: Comparison between planar and quasi-planar trench 88
Self-sustained turn-off oscillation of SiC MOSFETs: Origin, instability analysis, and prevention 88
Statistical Electrothermal Simulation for Lifetime Prediction of Parallel SiC MOSFETs and Modules 87
A Comprehensive Investigation on Short-Circuit Oscillation of p-GaN HEMTs 86
Investigation on the Short-Circuit Oscillation of Cascode GaN HEMTs 85
Edge-AI Enabled Wearable Device for Non-Invasive Type 1 Diabetes Detection Using ECG Signals 84
Substantial Improvement of the Short-circuit Capability of a 1.2 kV SiC MOSFET by a HfO2/SiO2Ferroelectric Gate Stack 84
Development of an HBM-ESD tester for power semiconductor devices 82
Design and Optimization of 3.3 kV Silicon Carbide Semi-Superjunction Schottky Power Devices 81
Self-sustained Oscillation of Superjunction MOSFET Intrinsic Diode during Reverse Recovery Transient 81
Short-Circuit Rugged 1.2 kV SiC MOSFET with a Non-Linear Dielectric Gate Stack 79
Numerical Analysis of the Schottky Contact Properties on the Forward Conduction of MPS/JBS SiC Diodes 78
3.3 kV 4H-SiC Trench Semi-Superjunction Schottky Diode With Improved ON-State Resistance 78
SiC GAA MOSFET Concept for High Power Electronics Performance Evaluation Through Advanced TCAD Simulations 73
A Scalable SPICE Electrothermal Compact Model for SiC MOSFETs: A Comparative Study between the LEVEL-3 and the BSIM 71
Effects of current filaments during dynamic avalanche on the collector-emitter-voltage of high voltage Trench-IGBTs 66
Total Area Current Distribution Analysis during UIS Test for 600 v Power Diode by Lock-In Thermography 64
Electro-thermal Simulations of Power Semiconductor Devices during High Stress Events 62
Short-circuit and Avalanche Robustness of SiC Power MOSFETs for Aerospace Power Converters 61
Kinetic model of SiGe selective epitaxial growth using RPCVD technique 61
New method to calibrate the pattern dependency of selective epitaxy of SiGe layers 55
Short circuit robustness analysis of new generation Enhancement-mode p-GaN power HEMTs 55
Kinetic model of SiGe selective epitaxial growth using RPCVD technique 51
Temperature dependence of the on-state voltage drop in field-stop IGBTs 48
SiC MOSFETs C-V Capacitance Curves with Negative Biased Drain 36
Evaluation of interface traps type, energy level and density of SiC mosfets by means of C-V curves TCAD simulations 29
SiC MOSFETs Biased C-V Curves: A Temperature Investigation 22
Frequency Investigation of SiC MOSFETs C-V Curves with Biased Drain 16
Totale 10.919
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Categoria #
all - tutte 33.124
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 33.124
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2021/2022273 2 0 5 13 2 4 0 12 38 25 37 135
2022/2023622 59 39 19 29 55 54 43 52 83 107 44 38
2023/2024502 19 84 132 52 34 8 13 30 13 21 70 26
2024/20252.799 108 138 18 29 105 157 304 180 144 187 1.048 381
2025/20266.028 614 609 586 744 1.023 327 526 458 455 343 176 167
2026/202784 84 0 0 0 0 0 0 0 0 0 0 0
Totale 10.923